A semiconductor device die transfer apparatus includes a first frame to hold a wafer tape having a plurality of semiconductor device die disposed on a side of the wafer tape and a second frame to secure a product substrate having a circuit trace thereon. The second frame is configured to secure the product substrate such that the circuit trace is disposed facing the plurality of semiconductor device die on the wafer tape. Additionally, a rotary transfer collet is disposed between the wafer tape and the product substrate. The rotary transfer collet has a rotational axis allowing rotation from a first position facing the wafer tape to pick a die of the plurality of semiconductor device die to a second position facing the circuit trace on the product substrate to release the die, thereby applying the die directly on the product substrate during a transfer operation.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

A laser welding method using a laser welding jig having a plurality of pressing parts, includes a step of placing a second member on a first member; a step of pressing the second member with the plurality of pressing parts in a direction toward the first member to thereby form a gap between the first member and the second member at most 300 m; and a first welding step of laser-welding the first member and the second member by irradiating on a surface of the second member at a location between the pressing parts with laser light while conducting the step of pressing.

A jig for bonding a semiconductor chip may include a pressurizing portion and at least one opening. The pressuring portion may be configured to pressurize an upper surface of the semiconductor chip bonded to a package substrate via a bump and a flux using a laser. The opening may be surrounded by the pressurizing portion. The laser irradiated to the bump and the flux may be transmitted through the opening. A vapor generated from the flux by the laser may be discharged through the opening. Thus, the contamination of the jig caused by the vapor may be prevented so that a transmissivity of the laser through the jig may be maintained.

A method of bonding a semiconductor element to a substrate includes: carrying a semiconductor element including a plurality of first electrically conductive structures with a bonding tool; supporting a substrate including a plurality of second electrically conductive structures with a support structure; providing a reducing gas in contact with each of the plurality of first conductive structures and the plurality of second conductive structures; establishing contact between corresponding ones of the plurality of first conductive structures and the plurality of second conductive structures; moving at least one of the semiconductor element and the substrate such that the corresponding ones of the plurality of first conductive structures and the plurality of second conductive structures are separated; re-establishing contact between the plurality of first conductive structures and the plurality of second conductive structures; and bonding the plurality of first conductive structures to the respective ones of the plurality of second conductive structures.

Disclosed are a laser bonding apparatus and a laser bonding method capable of bonding an electronic component to a three-dimensional structure having a regular or irregular shape in a curved portion such as an automobile tail lamp or a headlamp. The laser bonding apparatus and method for a three-dimensional structure may prevent misalignment and poor bonding of the electronic component with respect to the three-dimensional structure.

An apparatus includes a frame to hold a wafer tape having a first side and a second side. A plurality of semiconductor device dies are disposed on the first side of the wafer tape. A support member supports a product substrate having a circuit trace thereon. The support member is configured to hold the product substrate such that the circuit trace is disposed facing the plurality of semiconductor device dies on the wafer tape. A plurality of needles are disposed adjacent the second side of the wafer tape. A needle actuator is connected to the plurality of needles and is configured to move at least one needle of the plurality of needles to a die transfer position at which the at least one needle presses on the second side of the wafer tape to press a semiconductor device die into contact with the circuit trace.

A system to effectuate improved transfer of semiconductor die. A first frame secures a first substrate having the semiconductor die. A second frame secures a second substrate adjacent the first substrate. A needle is disposed adjacent to the first frame. The needle includes: a longitudinal surface extending in a direction toward the second frame, and a base end having a cross-sectional dimension being based, at least in part, on a cross-sectional dimension of the semiconductor die. A needle actuator is operably connected to the needle and is configured to actuate the needle such that, during the transfer operation, when the first substrate is secured in the first frame and the second substrate is secured in the second frame, the needle presses the semiconductor die into contact with the second substrate so as to transfer the semiconductor die onto the second substrate.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.