A die bonding apparatus includes: a mounting base including a mounting area on which a first member is mounted; a heater arranged below the mounting base; a side wall configured to surround the mounting area; a collet configured to hold a second member by vacuum-chucking at an end portion; a lid including a hole, the lid being mounted on the side wall; a moving structure configured to move the collet to transport the second member held by the collet through the hole for bonding the second member to the first member; and a gas-supplying tube arranged on the side wall and configured to supply a heating gas to a heating space formed by the side wall and the lid. The lid contains a material capable of: reflecting an infrared radiation caused by the heater and the heating gas; or absorbing and re-radiating the infrared radiation.

A method includes providing a substrate having substrate terminals and providing a first component having a first terminal and a second terminal. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first terminal and a substrate terminal and coupling the second clip to another substrate terminal. The method includes encapsulating the structure and removing a portion of the clip connector. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant. Other examples and related structures are also disclosed herein.

A semiconductor device includes a substrate, a semiconductor element and a tin-based solder layer. The semiconductor element faces the substrate in a normal direction of the substrate. The normal direction corresponds to a normal line of the substrate. The tin-based solder layer joins the semiconductor element to the substrate. The tin-based solder layer a central portion and a peripheral portion surrounding the central portion. The tin-based solder layer has a tin crystal with a C-axis at each of the central portion and the peripheral portion. The C-axis at the central portion intersects the normal line at an angle larger than 45 degrees with respect to the normal line. The C-axis at the peripheral portion either intersects the normal line at an angle smaller than or equal to 45 degrees with respect to the normal line, or is parallel to the normal line.

In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

A production of voids between substrates is prevented when the substrates are bonded together, and the substrates are bonded together at a high positional precision while suppressing a strain. A method for bonding a first substrate and a second substrate includes a step of performing hydrophilization treatment to cause water or an OH containing substance to adhere to bonding surface of the first substrate and the bonding surface of the second substrate, a step of disposing the first substrate and the second substrate with the respective bonding surfaces facing each other, and bowing the first substrate in such a way that a central portion of the bonding surface protrudes toward the second substrate side relative to an outer circumferential portion of the bonding surface, a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate at the respective central portions, and a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate across the entirety of the bonding surfaces, decreasing a distance between the outer circumferential portion of the first substrate and an outer circumferential portion of the second substrate with the respective central portions abutting each other at a pressure that maintains a non-bonded condition.

An arrangement includes a chamber, a heating element arranged in the chamber, wherein the heating element, when a first connection partner with a pre-connection layer formed thereon is arranged in the chamber, is configured to heat the first connection partner and the pre-connection layer, thereby melting the pre-connection layer, and a cooling trap. During the process of heating the first connection partner with the pre-connection layer formed thereon, the cooling trap has a temperature that is lower than the temperature of all other components of or in the chamber such that liquid evaporating from the pre-connection layer is attracted by and condenses on the cooling trap.

A radiative heat collective bonder or gangbonder for packaging a semiconductor die stack is provided. The bonder generally includes a shroud positioned at least partially around the die stack and a radiative heat source positioned inward of the shroud and configured to emit a radiative heat flux in a direction away from the shroud. The bonder may further include a bondhead configured to contact the backside of the topmost die in the die stack and optionally include another bondhead configured to contact a substrate beneath the die stack. The radiative heat source may be configured to direct the radiative heat flux to at least a portion of the die stack to reduce a vertical temperature gradient in the die stack. One or both of the bondheads may be configured to concurrently direct a conductive heat flux into the die stack.

A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.

A method for manufacturing a semiconductor device includes: fixing a semiconductor chip to a first part of a leadframe; bonding one connector member to a first terminal of the semiconductor chip, a second terminal of the semiconductor chip, a second part of the leadframe, and a third part of the leadframe; forming a sealing member; and separating a first conductive part of the connector member and a second conductive part of the connector member by removing at least a section of the portion of the connector member exposed outside the sealing member, the first conductive part being bonded to the first terminal and the second part, the second conductive part being bonded to the second terminal and the third part.

A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.