Tools and systems for processing semiconductor devices, and methods of processing semiconductor devices are disclosed. In some embodiments, a method of using a tool for processing semiconductor devices includes a tool with a second material disposed over a first material, and a plurality of apertures disposed within the first material and the second material. The second material comprises a higher reflectivity than the first material. Each of the apertures is adapted to retain a package component over a support during an exposure to energy.

A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.

An apparatus for aligning dipoles is provided. The apparatus includes: an electric field forming unit including a stage and a probe unit, the probe unit being configured to form an electric field on the stage; an inkjet printing device including an inkjet head, the inkjet head being configured to spray ink including a solvent and dipoles dispersed in the solvent onto the stage; a light irradiation device configured to irradiate light onto the stage; and a temperature control device including a temperature control unit, the temperature control unit being configured to control a temperature of the solvent sprayed on the stage.

A semiconductor processing apparatus includes a process chamber that defines an enclosure. The enclosure includes a substrate support configured to support a substrate and rotate the substrate about a central axis of the process chamber. The substrate support is also configured to move vertically along the central axis and position the substrate at multiple locations in the enclosure. The apparatus also includes one or more UV lamps configured to irradiate a top surface of the substrate supported on the substrate support.

This member connection method includes a printing step. In the printing step, a coating film-formed region in which the coating film is formed, and a coating film non-formed region in which the coating film is not formed are formed in the print pattern, and the coating film-formed region is divided into a plurality of concentric regions and a plurality of radial regions by means of a plurality of line-shaped regions provided so as to connect various points, which are separated apart from one another in the marginal part of the connection region.

An apparatus for aligning dipoles is provided. The apparatus includes: an electric field forming unit including a stage and a probe unit, the probe unit being configured to form an electric field on the stage; an inkjet printing device including an inkjet head, the inkjet head being configured to spray ink including a solvent and dipoles dispersed in the solvent onto the stage; a light irradiation device configured to irradiate light onto the stage; and a temperature control device including a temperature control unit, the temperature control unit being configured to control a temperature of the solvent sprayed on the stage.

An apparatus for aligning dipoles is provided. The apparatus includes: an electric field forming unit including a stage and a probe unit, the probe unit being configured to form an electric field on the stage; an inkjet printing device including an inkjet head, the inkjet head being configured to spray ink including a solvent and dipoles dispersed in the solvent onto the stage; a light irradiation device configured to irradiate light onto the stage; and a temperature control device including a temperature control unit, the temperature control unit being configured to control a temperature of the solvent sprayed on the stage.

Tools and systems for processing semiconductor devices, and methods of processing semiconductor devices are disclosed. In some embodiments, a method of using a tool for processing semiconductor devices includes a tool with a second material disposed over a first material, and a plurality of apertures disposed within the first material and the second material. The second material comprises a higher reflectivity than the first material. Each of the apertures is adapted to retain a package component over a support during an exposure to energy.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.