The mounting apparatus includes: a bonding head 14 that bonds, while pressing, a semiconductor chip 100 onto a substrate 110 or another semiconductor chip 100; and a heating mechanism 16 that heats the semiconductor chip 100 from the side during the execution of this bonding. After two or more semiconductor chips 100 are stacked while being bonded by temporary pressure-bonding, the bonding head 14 heats and applies pressure to an upper surface of the resultant stacked body, thereby integrally pressure-bonding the two or more semiconductor chips 100, and at the time of this pressure-bonding the heating mechanism 16 heats the stacked body from the side.

A die bonding apparatus includes: a mounting base including a mounting area on which a first member is mounted; a heater arranged below the mounting base; a side wall configured to surround the mounting area; a collet configured to hold a second member by vacuum-chucking at an end portion; a lid including a hole, the lid being mounted on the side wall; a moving structure configured to move the collet to transport the second member held by the collet through the hole for bonding the second member to the first member; and a gas-supplying tube arranged on the side wall and configured to supply a heating gas to a heating space formed by the side wall and the lid. The lid contains a material capable of: reflecting an infrared radiation caused by the heater and the heating gas; or absorbing and re-radiating the infrared radiation.

The present disclosure relates to a method for curing a heat-curable material (1) in an embedded curing zone (2) and an assembly resulting from such method. The method comprises providing a heat-conducting strip (3) partially arranged between a component (9) and a substrate (10) that form the embedded curing zone (2) therein between. The heat-conducting strip (3) extends from the embedded curing zone (2) to a radiation-accessible zone (7) that is distanced from the embedded curing zone (2) and at least partially free of the component (9) and the substrate (10). The method further comprises irradiating the heat-conducting strip (3) in the radiation-accessible zone (7) by means of electromagnetic radiation (6). Heat (4a) generated by absorption of the electromagnetic radiation (6) in the heat-conducting strip (3) is conducted from the radiation-accessible zone (7) along a length of the heat-conducting strip (3) to the embedded curing zone (2) to cure the heat-curable material (1) by conducted heat (4b) emanating from the heat-conducting strip (3) into the embedded curing zone (2).

An integrated circuit (IC) chip package assembly apparatus and techniques for assembling IC chip packages are described. For example, a techniques for fabricating an IC package include (A) determining a first package assembly yield (PAY) across a first die pool comprising a first plurality of dies having a performance criteria within a first predefined range; (B) determining a second PAY across a second die pool comprising a second plurality of dies having a performance criteria within a second predefined range of performance criteria that is different than the first predefined range of performance criteria, the second plurality of dies comprising a portion of the first plurality of dies; and (C) generating a final assembly sequence in response to analyzing the first and second PAYs, the final assembly sequence comprising rules for combining dies in accordance with obtaining a higher of the first PAY and the second PAY.

An integrated circuit (IC) chip package assembly apparatus and techniques for assembling IC chip packages are described. For example, a techniques for fabricating an IC package include (A) determining a first package assembly yield (PAY) across a first die pool comprising a first plurality of dies having a performance criteria within a first predefined range; (B) determining a second PAY across a second die pool comprising a second plurality of dies having a performance criteria within a second predefined range of performance criteria that is different than the first predefined range of performance criteria, the second plurality of dies comprising a portion of the first plurality of dies; and (C) generating a final assembly sequence in response to analyzing the first and second PAYs, the final assembly sequence comprising rules for combining dies in accordance with obtaining a higher of the first PAY and the second PAY.

A semiconductor manufacturing system comprises a laser and a heated bond tip and is configured to bond a die stack in a semiconductor assembly. The semiconductor assembly includes a wafer, manufacture from a material that is optically transparent to a beam emitted by the laser and configured to support a die stack comprising a plurality of semiconductor dies. A metal film is deposited on the wafer and heatable by the beam emitted by the laser. The heated bond tip applies heat and pressure to the die stack, compressing the die stack between the heated bond tip and the metal film and thermally bonding dies in the stack by heat emitted by the heated bond tip and the metal film when the metal film is heated by the beam emitted from the laser.

A semiconductor chip package includes a substrate; a semiconductor die mounted on the substrate, wherein the semiconductor die comprises a bond pad disposed on an active surface of the semiconductor die, and a passivation layer covering perimeter of the bond pad, wherein a bond pad opening in the passivation layer exposes a central area of the bond pad; a conductive paste post printed on the exposed central area of the bond pad; and a bonding wire secured to a top surface of the conductive paste post. The conductive paste post comprises copper paste.

The invention relates to a method for connecting components, comprising the following steps: (1) applying a metal paste containing an organic solvent to the contact surface of a first component; (2) optionally applying the metal paste to the contact surface of a second component to be connected to the first component; (3) producing a sandwich arrangement with the two components and a layer of the metal paste in-between; (4) drying the layer of metal paste between the components; and (5) pressureless sintering of the sandwich arrangement comprising the layer of dried metal paste, the drying and the pressureless sintering being performed by irradiation with IR radiation with a peak wavelength in the wavelength range of between 750 and 1500 nm. The components can be selected from the group consisting of substrates, active components and passive components. One or both of the components can be permeable to IR radiation. Step (4) and/or step (5) can be carried out in an atmosphere containing oxygen or an oxygen-free atmosphere. In both cases, at least one of the components can have an oxidation-sensitive contact surface.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 m to 0.8 M.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 m to 0.8 M.