A method of forming a 3D package. The method may include joining an interposer to a laminate chip carrier with the solid state diffusion of a first plurality of solder bumps by applying a first selective non-uniform heat and first uniform pressure; joining a top chip to the interposer with the solid state diffusion of a second plurality of solder bumps by applying a second selective non-uniform heat and second uniform pressure; heating the 3D package, the first and second pluralities of solder bumps to a temperature greater than the reflow temperature of the first and second pluralities of solder bumps, where the second plurality of solder bumps achieves the reflow temperature before the first plurality of solder bumps, where the first and second selective non-uniform heats being less that the reflow temperature of the first and second pluralities of solder bumps, respectively.

Solder compositions for semiconductor fabrication are provided that include silver (Ag) of 3.0 wt. % to 4.0 wt. %, copper (Cu) of 0.75 wt. % to 1.0 wt. %, nickel (Ni) of 0.08 wt. % to 1.0 wt. %, and tin (Sn) of 94 wt. % to 96.17 wt. %, or that include bismuth (Bi) of 0.3 wt. % to 2.0 wt. % in place of a portion of the tin (Sn) in the solder composition; and, semiconductor packages are also provided that use the solder compositions for bonding one or more components of the semiconductor packages to each other.

A method for transferring an electronic device includes steps as follows. A flexible carrier having a first surface on which the electronic device to be transferred is disposed and a second surface, a target substrate, a target substrate, and a light-transmissible pin having a pressing end are provided. The flexible carrier is spaced from the target substrate with the first surface thereof facing the target substrate. The flexible carrier is deformed by exerting the pin to press the second surface with the pressing end thereof at a position corresponding to the electronic device until the electronic device is in contact with the target substrate. An energy beam emitted from a light source standing outside the pin and then traveling through the pin and going out from the pressing end to bond the electronic device onto the target substrate is applied. The pin is released from pressing the flexible carrier.

A process of forming a semiconductor device is disclosed, where the semiconductor device provides a base and a semiconductor chip that is mounted on the base through solder. The process includes steps of: (a) melting the solder by a heater that is provided within a block of a bonding apparatus, where the block mounts the base thereon and the base provides the solder thereon; (b) heating the semiconductor chip by radiation beams in advance to mount the semiconductor chip onto the base; and (c) placing the semiconductor chip onto the melted solder.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

An oven with a processing chamber having an adjustable enclosed volume that is configured to support a substrate and includes a lamp assembly configured to heat the substrate. The oven also includes a sealing door that bounds one end of the processing chamber. The sealing door is configured to be moved from a first position to a second position to change the enclosed volume of the processing chamber from a first volume to a second volume.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.