A transfer method includes providing a first light emitting diode on a first substrate, performing a partial laser liftoff of the first light emitting diode from the first substrate, laser bonding the first light emitting diode to the backplane after performing the partial laser liftoff, and separating the first substrate from the first light emitting diode after the laser bonding.

A transfer method includes providing a first light emitting diode on a first substrate, performing a partial laser liftoff of the first light emitting diode from the first substrate, laser bonding the first light emitting diode to the backplane after performing the partial laser liftoff, and separating the first substrate from the first light emitting diode after the laser bonding.

An automatic assembling system, comprising: a robot performing an operation of inserting a first member into a second member; a force sensor for detecting an insertion force exerted on the first member by the robot; and a controller for controlling the insertion force with a closed-loop feedback control according to a difference between the insertion force detected by the force sensor and a predetermined insertion force, so that the insertion force is less than the predetermined insertion force to protect the first member and/or the second member from damage due to an overlarge insertion force. The present invention also is directed to a method for automatically assembling a product.

A light emitting module includes: a base board; and a plurality of divisional planar light emitters disposed adjacent to each other on one surface of the base board. The base board includes: a plurality of conductive parts, a flexible base part joined to the conductive parts, and an insulating base part joined to the flexible base part. Each of the plurality of divisional planar light emitters includes: a plurality of wiring parts electrically connected with corresponding ones of the conductive parts of the base board, a plurality of light emitting elements each disposed on corresponding ones of the wiring parts, and a sealing part sealing the plurality of light emitting elements and facing the insulating base part.

According to one embodiment, there is provided a bonding method of a semiconductor chip. The bonding method includes arranging an activated front surface of a semiconductor chip and an activated front surface of a substrate so as to face each other with a back surface of the semiconductor chip attached to a sheet. The bonding method includes pushing the back surface of the semiconductor chip through the sheet to closely attach the activated front surface of the semiconductor chip and the activated front surface of the substrate. The bonding method includes stripping the sheet from the back surface of the semiconductor chip while maintaining a state in which the activated front surface of the semiconductor chip is closely attached to the activated front surface of the substrate.

To allow short time spreading for adhesive, verifying whether the adhesive is spread out to a member end. In obtaining a bonded member by applying the adhesive to a surface of one of two members and bonding the members with a member bonding device, a tilt adjusting device acquires with a camera an image of spreading state of the adhesive in the members' bonding surface, and adjusts the tilt of the bonded member when a non-spreading part of the adhesive between ends of the bonded member and the adhesive has a size bias so that the adhesive moves to the larger side of the part, and a spreading adjustment device controls a pushing amount and a pushing time interval of a pressing-side member to adjust spreading of the adhesive so that the part size reduces to a predetermined size depending on the part size acquired with the camera, and cures the adhesive in the bonded member edge with the non-spreading part eliminated.

Methods and systems of bonding substrates include disposing a low melting point material and one or more high melting point materials having a higher melting temperature than a melting temperature of the low melting point material between a first substrate and a second substrate to form a substrate assembly including a contacting surface comprising first and second areas; applying a first force at the first area; and applying heat to form a bond layer between the first and second substrates. A first formed porosity of the bond layer is aligned with the first area of the contacting surface. A second formed porosity of the bond layer is aligned with the second area of the contacting surface to which the first force was not applied, and the first formed porosity is different from the second formed porosity.

The present invention provides a method for producing a semiconductor device, including: a semiconductor chip-mounting step of subsequently pressing a plurality of semiconductor chips by a first pressing member to respectively bond the plurality of semiconductor chips to a plurality of mounting areas provided on a substrate, wherein the bonding is performed in a state where adhesive sheets are respectively interposed between the plurality of semiconductor chips and the plurality of mounting areas, each of the adhesive sheets includes sinterable metal particles that can be sintered by heating at a temperature of 400° C. or less, and the first pressing member is heated to a temperature, at which the sinterable metal particles can be sintered.

The present invention provides a method for producing a semiconductor device, including: a semiconductor chip-mounting step of subsequently pressing a plurality of semiconductor chips by a first pressing member to respectively bond the plurality of semiconductor chips to a plurality of mounting areas provided on a substrate, wherein the bonding is performed in a state where adhesive sheets are respectively interposed between the plurality of semiconductor chips and the plurality of mounting areas, each of the adhesive sheets includes sinterable metal particles that can be sintered by heating at a temperature of 400° C. or less, and the first pressing member is heated to a temperature, at which the sinterable metal particles can be sintered.

In an embodiment, a system includes: a circular frame comprising a first side and a second side opposite the first side, wherein the circular frame comprises an aperture formed therethrough; an insert disposed within the aperture; a first wafer disposed over the insert; a second wafer disposed over the first wafer, wherein both the first wafer and the second wafer are configured for eutectic bonding when heated; two clamps disposed on the first side along the circular frame, wherein the two clamps are configured to contact the second wafer at respective clamp locations; and a plurality of pieces configured to secure the insert within the aperture, the plurality of pieces comprising both fixed and flexible pieces, the plurality of pieces comprising two fixed pieces disposed respectively adjacent to the clamp locations along the second side of the circular frame.