A method of manufacturing a micro light emitting diode (LED) display module. The method of manufacturing a micro LED display module may include: pressing a plurality of micro LEDs disposed on a substrate to which an adhesive layer is applied, to electrically connect the plurality of micro LEDs to electrode pads of the substrate; performing testing to detect whether at least one of the plurality of micro LEDs is defective in a state in which the plurality of micro LEDs are pressurized and the adhesive layer is uncured; and based on detecting that at least one of the plurality of micro LEDs is defective, performing control to harden the adhesive layer.

A transistor package comprising: a substrate; a first transistor in thermal contact with the substrate, wherein the transistor comprises a gate; the substrate sintered to a heat sink through a sintered layer; an encapsulant that at least partially encapsulates the first transistor; and a Kelvin connection to the transistor gate.

A transistor package comprising: a substrate; a first transistor in thermal contact with the substrate, wherein the transistor comprises a gate; the substrate sintered to a heat sink through a sintered layer; an encapsulant that at least partially encapsulates the first transistor; and a Kelvin connection to the transistor gate.

The present invention discloses a bonding cavity structure and a bonding method, the bonding cavity structure comprises an upper carrier and a lower carrier, a gas-flow forming mechanism, which comprises multiple open-close integrated arms, the integrated arms are provided with multiple nozzles facing to wafer bonding surfaces, and the nozzles are switched to gas nozzles or vacuum suction nozzles, a closed space is formed by all the integrated arms closed together with the carriers, all the nozzle located on a side of two wafers are set as the gas nozzles, which blow gas parallel to the wafer bonding surfaces, meanwhile, all the nozzles located on the other side of the two wafers are set as the vacuum suction nozzles, which suck the gas blown from the gas nozzle at corresponding position, a high-speed gas-flow is generated between the two wafers, so as to produce a low pressure of Bernoulli effect, the wafers are not only subjected to thrust forces from backsides, but tension forces between the bonding surfaces are also affected by uniform low pressure, which enhances force uniformity during bonding process, and reduces an impact of particles on the bonding surfaces in the closed space .

The present invention discloses a bonding cavity structure and a bonding method, the bonding cavity structure comprises an upper carrier and a lower carrier, a gas-flow forming mechanism, which comprises multiple open-close integrated arms, the integrated arms are provided with multiple nozzles facing to wafer bonding surfaces, and the nozzles are switched to gas nozzles or vacuum suction nozzles, a closed space is formed by all the integrated arms closed together with the carriers, all the nozzle located on a side of two wafers are set as the gas nozzles, which blow gas parallel to the wafer bonding surfaces, meanwhile, all the nozzles located on the other side of the two wafers are set as the vacuum suction nozzles, which suck the gas blown from the gas nozzle at corresponding position, a high-speed gas-flow is generated between the two wafers, so as to produce a low pressure of Bernoulli effect, the wafers are not only subjected to thrust forces from backsides, but tension forces between the bonding surfaces are also affected by uniform low pressure, which enhances force uniformity during bonding process, and reduces an impact of particles on the bonding surfaces in the closed space .

According to one embodiment, there is provided a substrate bonding apparatus including a first chuck stage and a second chuck stage. The first chuck stage includes a first electromagnetic force generation unit. The first chuck stage is chuckable for a first substrate. The second chuck stage includes a second electromagnetic force generation unit. The second electromagnetic force generation unit faces the first electromagnetic force generation unit. The second chuck stage is chuckable for a second substrate.

According to one embodiment, there is provided a substrate bonding apparatus including a first chuck stage and a second chuck stage. The first chuck stage includes a first electromagnetic force generation unit. The first chuck stage is chuckable for a first substrate. The second chuck stage includes a second electromagnetic force generation unit. The second electromagnetic force generation unit faces the first electromagnetic force generation unit. The second chuck stage is chuckable for a second substrate.

A chip bonding method and a bonding device. The chip bonding method is used for bonding a chip to a display module, the display module includes a substrate and a functional layer on the substrate, the substrate includes a first substrate portion and a second substrate portion, the functional layer is on the first substrate portion, and an electrode is on an upper side of the second substrate portion. The chip bonding method includes: forming a light absorbing film layer on a side of the second substrate portion facing away from the electrode; coating a conductive adhesive film on the electrode, and placing the chip on the conductive adhesive film; and irradiating, by using a laser beam, a side of the second substrate portion facing away from the electrode.

An apparatus and method for bonding alignment are provided. The apparatus for bonding alignment includes a press assembly and an objective lens group (105) disposed on one side of the press assembly. The press assembly includes a first chuck (103) and a rotatable second chuck (104). When support surfaces of the first and second chucks are not parallel to each other, the second chuck is rotated to make the two support surfaces parallel. A first substrate (301) is then loaded on the first chuck, and alignment marks (302) on the first substrate are observed using the objective lens group disposed on one side of the press assembly. A second substrate (501) is loaded on the second chuck, and alignment marks (502) on the second substrate are also observed with the objective lens group. Based on an observation result by the objective lens group, the two substrates are moved so that the alignment marks thereon are aligned and hence the two substrates themselves are aligned. In this method, the chucks are adjusted, prior to the alignment of the substrates. This dispenses with the need for employment of high-precision components and reduces the complexity of the apparatus. Moreover, adjusting the chucks first can ensure control of a global alignment accuracy between the substrates, and in particular, can reduce wedge-shaped errors between the substrates that may result from deformations of the substrates during bonding.

The present disclosure, in some embodiments, relates to a workpiece bonding apparatus. The workpieces bonding apparatus includes a first substrate holder having a first surface configured to receive a first workpiece, and a second substrate holder having a second surface configured to receive a second workpiece. A vacuum apparatus is positioned between the first substrate holder and the second substrate holder and is configured to selectively induce a vacuum between the first surface and the second surface. The vacuum is configured to attract the first surface and the second surface toward one another.