The present disclosure is directed to a compact vertical oven for reflow of solder bumps for backend processes in semiconductor wafer assembly and packaging. This disclosure describes a vertical oven which uses a plurality of wafers (e.g., an example value is 50-100 wafers) in a batch with controlled injection of the reducing agent (e.g. formic acid), resulting in a process largely free of contamination. This disclosure describes controlled formic acid flow through a vertical system using laminar flow technology in a sub-atmospheric pressure environment, which is not currently available in the industry. The efficacy of the process depends on effective formic acid vapor delivery, integrated temperature control during heating and cooling, and careful design of the vapor flow path with exhaust. Zone-dependent reaction dynamics managed by vapor delivery process, two-steps temperature ramp control, and controlled cooling process and formic acid content ensures the effective reaction without any flux.

The present disclosure is directed to a compact vertical oven for reflow of solder bumps for backend processes in semiconductor wafer assembly and packaging. This disclosure describes a vertical oven which uses a plurality of wafers (e.g., an example value is 50-100 wafers) in a batch with controlled injection of the reducing agent (e.g. formic acid), resulting in a process largely free of contamination. This disclosure describes controlled formic acid flow through a vertical system using laminar flow technology in a sub-atmospheric pressure environment, which is not currently available in the industry. The efficacy of the process depends on effective formic acid vapor delivery, integrated temperature control during heating and cooling, and careful design of the vapor flow path with exhaust. Zone-dependent reaction dynamics managed by vapor delivery process, two-steps temperature ramp control, and controlled cooling process and formic acid content ensures the effective reaction without any flux.

A solder reflow oven includes a processing chamber that defines an enclosure. The enclosure includes a spindle configured to support a substrate and rotate the substrate about a central axis of the processing chamber. The spindle is also configured to move vertically along the central axis and position the substrate at different locations within the enclosure. The oven further includes a chemical delivery tube configured to direct a chemical vapor into the enclosure, a lamp assembly configured to heat a top surface of the substrate, and a lift assembly configured to move the spindle along the central axis.

A bonding tool for bonding a semiconductor element to a substrate on a bonding machine is provided. The bonding tool includes a body portion including a contact region for contacting the semiconductor element during a bonding process on the bonding machine. The bonding tool also includes a standoff extending from the body portion, and configured to contact the substrate during at least a portion of the bonding process.

The present invention has: a heater; and a bonding tool having a lower surface on which a memory chip is adsorbed; and an upper surface attached to the heater, and is provided with a bonding tool which presses the peripheral edge of the memory chip to a solder ball in a first peripheral area of the lower surface and which presses the center of the memory chip (60) to a DAF having a heat resistance temperature lower than that of the solder ball in a first center area. The amount of heat transmitted from the first center area to the center of the memory chip is smaller than that transmitted from the first peripheral area (A) to the peripheral edge of the memory chip. Thus, the bonding apparatus in which the center of a bonding member can be heated to a temperature lower than that at the peripheral edge can be provided.

The present invention has: a heater; and a bonding tool having a lower surface on which a memory chip is adsorbed; and an upper surface attached to the heater, and is provided with a bonding tool which presses the peripheral edge of the memory chip to a solder ball in a first peripheral area of the lower surface and which presses the center of the memory chip (60) to a DAF having a heat resistance temperature lower than that of the solder ball in a first center area. The amount of heat transmitted from the first center area to the center of the memory chip is smaller than that transmitted from the first peripheral area (A) to the peripheral edge of the memory chip. Thus, the bonding apparatus in which the center of a bonding member can be heated to a temperature lower than that at the peripheral edge can be provided.

A bonding tool for bonding a semiconductor element to a substrate on a bonding machine is provided. The bonding tool includes a body portion including a contact region for contacting the semiconductor element during a bonding process on the bonding machine. The bonding tool also includes a standoff extending from the body portion, and configured to contact the substrate during at least a portion of the bonding process.

The present disclosure is directed to a compact vertical oven for reflow of solder bumps for backend processes in semiconductor wafer assembly and packaging. This disclosure describes a vertical oven which uses a plurality of wafers (e.g., an example value is 50-100 wafers) in a batch with controlled injection of the reducing agent (e.g. formic acid), resulting in a process largely free of contamination. This disclosure describes controlled formic acid flow through a vertical system using laminar flow technology in a sub-atmospheric pressure environment, which is not currently available in the industry. The efficacy of the process depends on effective formic acid vapor delivery, integrated temperature control during heating and cooling, and careful design of the vapor flow path with exhaust. Zone-dependent reaction dynamics managed by vapor delivery process, two-steps temperature ramp control, and controlled cooling process and formic acid content ensures the effective reaction without any flux.

The present disclosure is directed to a compact vertical oven for reflow of solder bumps for backend processes in semiconductor wafer assembly and packaging. This disclosure describes a vertical oven which uses a plurality of wafers (e.g., an example value is 50-100 wafers) in a batch with controlled injection of the reducing agent (e.g. formic acid), resulting in a process largely free of contamination. This disclosure describes controlled formic acid flow through a vertical system using laminar flow technology in a sub-atmospheric pressure environment, which is not currently available in the industry. The efficacy of the process depends on effective formic acid vapor delivery, integrated temperature control during heating and cooling, and careful design of the vapor flow path with exhaust. Zone-dependent reaction dynamics managed by vapor delivery process, two-steps temperature ramp control, and controlled cooling process and formic acid content ensures the effective reaction without any flux.

A bonding system includes a substrate transfer device configured to transfer a first substrate and a second substrate to a bonding apparatus, a first holding plate configured to hold the first substrate from an upper surface side, and a second holding plate disposed below the first holding plate and configured to hold the second substrate from a lower surface side so that the second substrate faces the first substrate. The substrate transfer device includes a first holding part capable of holding the first substrate from the upper surface side, and a second holding part disposed below the first holding part and capable of holding the second substrate from the lower surface side. The first holding part and the second holding part are configured to receive and hold the first substrate and the second substrate at the same time from the first holding plate and the second holding plate.