Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 μm to about 100 μm, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

An apparatus for aligning dipoles is provided. The apparatus includes: an electric field forming unit including a stage and a probe unit, the probe unit being configured to form an electric field on the stage; an inkjet printing device including an inkjet head, the inkjet head being configured to spray ink including a solvent and dipoles dispersed in the solvent onto the stage; a light irradiation device configured to irradiate light onto the stage; and a temperature control device including a temperature control unit, the temperature control unit being configured to control a temperature of the solvent sprayed on the stage.

An apparatus includes a transfer mechanism to transfer an electrically-actuatable element directly from a wafer tape to a transfer location on a circuit trace on a product substrate. The transfer mechanism includes one or more transfer wires. Two or more stabilizers disposed on either side of the one or more transfer wires. A needle actuator is connected to the one or more transfer wires and the two or more stabilizers to move the one or more transfer wires and the two or more stabilizers to a die transfer position.

Embodiments of the present disclosure include method for sequentially mounting multiple semiconductor devices onto a substrate having a composite metal structure on both the semiconductor devices and the substrate for improved process tolerance and reduced device distances without thermal interference. The mounting process causes “selective” intermixing between the metal layers on the devices and the substrate and increases the melting point of the resulting alloy materials.

According to one embodiment, there is provided a substrate bonding apparatus including a first chucking stage, a second chucking stage, and an alignment unit. The first chucking stage is configured to chuck a first substrate. The second chucking stage is disposed facing the first chucking stage. The second chucking stage is configured to chuck a second substrate. The alignment unit is configured to be inserted between the first chucking stage and the second chucking stage. The alignment unit includes a base body, a first detection element, and a second detection element. The base body includes a first main face and a second main face opposite to the first main face. The first detection element is disposed on the first main face. The second detection element is disposed on the second main face.

Interconnecting a first chip and a second chip includes mounting the first and second chips to a chip handler having an opening and at least one support surface. Each of the first chip and the second chip has a first surface including a first set of terminals and a second surface opposite to the first surface. The first surface of the first chip and the first surface of the second chip mounted to the chip handler are supported by the at least one support surface of the chip handler. The first and second chips are placed on a chip support member with the chip handler from the second surfaces. A bridge member is inserted by a bridge handler through the opening of the chip handler to place the bridge member onto the first sets of terminals of the first and second chips that are exposed from the opening.

An industrial-scale apparatus, system, and method for handling precisely aligned and centered semiconductor wafer pairs for wafer-to-wafer aligning and bonding applications includes an end effector having a frame member and a floating carrier connected to the frame member with a gap formed therebetween, wherein the floating carrier has a semi-circular interior perimeter. The centered semiconductor wafer pairs are positionable within a processing system using the end effector under robotic control. The centered semiconductor wafer pairs are bonded together without the presence of the end effector in the bonding device.

An apparatus includes a transfer mechanism to transfer an electrically-actuatable element directly from a wafer tape to a transfer location on a circuit trace on a product substrate. The transfer mechanism includes one or more transfer wires. Two or more stabilizers disposed on either side of the one or more transfer wires. A needle actuator is connected to the one or more transfer wires and the two or more stabilizers to move the one or more transfer wires and the two or more stabilizers to a die transfer position.

A method of fabricating a display device may include disposing a display panel on a stage to be parallel to an XZ-plane defined by a horizontal X-axis and a vertical Z-axis, measuring a height of a first side surface of the display panel in a direction of the Z-axis, rotating the stage such that the first side surface is parallel to a reference horizontal line in case that a result of the measured height indicates that the first side surface includes an inclined surface, moving the display panel in a direction of the Z-axis such that a first pad disposed on the first side surface overlaps the reference horizontal line, and bonding a second pad of a printed circuit board with the first pad.

A bonding apparatus bonds a first substrate having a first alignment mark and a second substrate having a second alignment mark. A first radiation unit radiates white light to an imaging area of a first imaging unit when the second alignment mark is imaged by the first imaging unit. A second radiation unit radiates white light to an imaging area of a second imaging unit when the first alignment mark is imaged by the second imaging unit. A controller detects positions of the first alignment mark and the second alignment mark by processing images obtained by the first imaging unit and the second imaging unit, corrects the detected position of the first alignment mark based on a relationship between a wavelength and an intensity of reflection light reflected from the first substrate, and controls a moving unit based on the corrected position of the first alignment mark.