Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

An apparatus includes a product substrate having a transfer surface, and a semiconductor die defined, at least in part, by a first surface adjoined to a second surface that extends in a direction transverse to the first surface. The transfer surface includes ripples in a profile thereof such that an apex on an individual ripple is a point on a first plane and a trough on the individual ripple is a point on a second plane. The semiconductor die is disposed on the transfer surface between the first plane and the second plane such that the second surface of the semiconductor die extends transverse to the first plane and the second plane.

A system for connecting electronic assemblies and/or for manufacturing workpieces has a plurality of modules for connecting the electronic assemblies and/or for manufacturing the workpieces. At least one module is a loading station and one is an unloading station, or one module is a loading station and unloading station. At least one further module is a manufacturing station, and a manufacturing workpiece carrier is provided for accommodating the electronic assemblies and/or workpieces which is movable in automated manner by a conveying unit from the loading station via the manufacturing station to the unloading station. A multiple gripper is provided by which at least two electronic assemblies and/or workpieces are simultaneously placeable onto the manufacturing workpiece carrier. A foil/film transfer unit and a foil/film detachment unit and a manufacturing workpiece carrier with at least two workpieces is provided. A method for connecting electronic assemblies and/or for manufacturing workpieces is provided.

A semiconductor substrate alignment device includes: a lower chuck; a lower chuck driving unit; an upper chuck above and overlapping the lower chuck; observation windows in the upper chuck, imaging units respectively configured to irradiate light through the observation windows and to obtain images by detecting light reflected from the semiconductor substrates; a distance sensor configured to detect a distance between an edge of the lower chuck and an edge of the upper chuck; and a control unit configured to identify first and second alignment keys from images of first and second semiconductor substrates, determine an alignment error value of the first and second semiconductor substrates, and compensate for the alignment error value by driving the lower chuck driving unit.

Discussed is a device for self-assembling semiconductor light-emitting diodes for placing the semiconductor light-emitting diodes at predetermined positions on a substrate by using an electric field and a magnetic field, the substrate being accommodated in an assembly chamber accommodating a fluid, the device including a substrate chuck configured to dispose the substrate at an assembly position, wherein the substrate chuck includes a substrate support part configured to support the substrate on which an assembly electrode is formed, a rotating part configured to support the substrate support part, and a controller configured to control driving of the substrate chuck, wherein the substrate support part includes micro-holes for injecting a gas between the fluid and the substrate, and wherein the controller controls whether the gas is injected through the micro-holes according to whether the substrate is raised or lowered.

An apparatus includes a product substrate having a transfer surface, and a semiconductor die defined, at least in part, by a first surface adjoined to a second surface that extends in a direction transverse to the first surface. The semiconductor die is disposed on the transfer surface of the product substrate such that at least a portion of the first surface is in contact with the transfer surface, and at least a portion of the second surface is embedded onto the product substrate, beneath a plane that extends across the transfer surface.

A method is provided and includes the following steps. A first wafer is coupled to a first support of a bonding tool and a second wafer is coupled to a second support of the bonding tool. The second wafer is bonded to the first wafer with the first wafer coupled to the first support. Whether a bubble is between the bonded first and second wafers in the bonding tool is detected.

The present invention provides a bonding method of bonding each of a plurality of first objects to a first substrate, comprising: determining, as an offset amount, an amount to offset a bonding position on the first substrate from a design position for each of the plurality of first objects; and bonding each of the plurality of first objects to the first substrate based on the offset amount determined in the determining, wherein after the bonding, a process of bonding a plurality of second objects which are bonded to a second substrate, to the plurality of first objects bonded to the first substrate is performed, and wherein in the determining, the offset amount is determined to satisfy a predetermined condition based on arrangement information representing an arrangement of the plurality of second objects on the second substrate.

A substrate bonding apparatus that brings a part of a surface of a first substrate and a part of a surface of a second substrate into contact in a state where a temperature difference is generated therebetween, to form contact regions at the parts, and then enlarges the contact regions to bond the first substrate and the second substrate, wherein enlargement of the contact regions starts before positional misalignment between the first substrate and the second substrate exceeds a threshold, and the threshold is set such that positional misalignment after the first substrate and the second substrate are bonded does not exceed a tolerated value.