A device which prints an electrically conductive pattern on a downhole tool using electrical ink includes a print head assembly and gripper claw assembly to print and manipulate the downhole tool during printing, respectively. The electrically conductive pattern may be an antenna coil, circuit or other desired pattern. After printing, the accuracy of the pattern is verified by the system and an impact resistant coating is applied to the pattern.

A stacked wafer assembly is made by forming a grid of grooves corresponding to projected dicing lines in a face side of each of two wafers, thereby forming demarcated areas on the face side of each of the two wafers. One of the wafers is installed with demarcated areas face upwardly, and thereafter liquid is supplied to the demarcated areas in a quantity just enough to stay on upper surfaces of the demarcated areas without overflowing. The other wafer is placed over the one wafer with demarcated areas of the other wafer facing the respective demarcated areas of the one wafer, thereby bringing respective central positions of the facing demarcated areas of the wafers into self-alignment with each other under the surface tension of the liquid sandwiched between the facing demarcated areas. The liquid is removed to bring the wafers into intimate contact with each other.

In sonic examples, a method includes pre-stressing a flange, heating the flange to a die-attach temperature, and attaching a die to the flange at the die-attach temperature using a die-attach material. In some examples, the flange includes a metal material, the die-attach temperature may be at least two hundred degrees Celsius, and the die-attach material may include solder and/or an adhesive. In some examples, the method includes cooling the semiconductor die and metal flange to a room temperature after attaching the semiconductor die to the metal flange at the die-attach temperature using a die-attach material.

An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to secure the wafer tape and a support frame configured to secure a support substrate. The support substrate includes a plurality of holes and secures the product substrate. The apparatus further includes an actuator to transfer the semiconductor die to a transfer location on the product substrate.

A curable resin or adhesive composition includes at least one monomer, a photoinitiator capable of initiating polymerization of the monomer when exposed to light, and at least one energy converting material, preferably a phosphor, capable of producing light when exposed to radiation (typically X-rays). The material is particularly suitable for bonding components at ambient temperature in situations where the bond joint is not accessible to an external light source. An associated method includes: placing a polymerizable adhesive composition, including a photoinitiator and energy converting material, such as a down-converting phosphor, in contact with at least two components to be bonded to form an assembly; and, irradiating the assembly with radiation at a first wavelength, capable of conversion (down-conversion by the phosphor) to a second wavelength capable of activating the photoinitiator, to prepare items such as inkjet cartridges, wafer-to-wafer assemblies, semiconductors, integrated circuits, and the like.

A curable resin or adhesive composition includes at least one monomer, a photoinitiator capable of initiating polymerization of the monomer when exposed to light, and at least one energy converting material, preferably a phosphor, capable of producing light when exposed to radiation (typically X-rays). The material is particularly suitable for bonding components at ambient temperature in situations where the bond joint is not accessible to an external light source. An associated method includes: placing a polymerizable adhesive composition, including a photoinitiator and energy converting material, such as a down-converting phosphor, in contact with at least two components to be bonded to form an assembly; and, irradiating the assembly with radiation at a first wavelength, capable of conversion (down-conversion by the phosphor) to a second wavelength capable of activating the photoinitiator, to prepare items such as inkjet cartridges, wafer-to-wafer assemblies, semiconductors, integrated circuits, and the like.

An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to hold the wafer tape and a support frame disposed adjacent to the wafer frame. A flexible support substrate is secured in the support frame and is configured to support the product substrate. The apparatus further includes an actuator configured to position the semiconductor die at a transfer position with respect to the product substrate. An energy-emitting device is configured to direct energy through the flexible support substrate to a portion of the product substrate corresponding to the transfer position at which the semiconductor die is positioned to be affixed to the product substrate.

An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to hold the wafer tape and a support frame disposed adjacent to the wafer frame. A flexible support substrate is secured in the support frame and is configured to support the product substrate. The apparatus further includes an actuator configured to position the semiconductor die at a transfer position with respect to the product substrate. An energy-emitting device is configured to direct energy through the flexible support substrate to a portion of the product substrate corresponding to the transfer position at which the semiconductor die is positioned to be affixed to the product substrate

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100 C., preferably at most 60 C., advantageously at most 20 C. and ideally at most 5 C. and/or deviates from the operating temperature of the component by at most 50 C., preferably by at most 20 C., in particular by at most 10 C. and ideally by at most 5 C., preferably by at most 2 C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).

The invention relates to a method for electrically contacting a component (10) (for example a power component and/or a (semiconductor) component having at least one transistor, preferably an IGBT (insulated-gate bipolar transistor)) having at least one contact (40, 50), at least one open-pored contact piece (60, 70) is galvanically (electrochemically or free of external current) connected to at least one contact (40, 50). In this way, a component module is achieved. The contact (40, 50) is preferably a flat part or has a contact surface, the largest planar extent thereof being greater than an extension of the contact (40, 50) perpendicular to said contact surface. The temperature of the galvanic connection is at most 100 C., preferably at most 60 C., advantageously at most 20 C. and ideally at most 5 C. and/or deviates from the operating temperature of the component by at most 50 C., preferably by at most 20 C., in particular by at most 10 C. and ideally by at most 5 C., preferably by at most 2 C. The component (10) can be contacted by means of the contact piece (60, 70) with a further component, a current conductor and/or a substrate (90). Preferably, a component (10) having two contacts (40, 50) on opposite sides of the component (10) is used, wherein at least one open-pored contact piece (60, 70) is galvanically connected to each contact (40, 50).