A laser compression bonding device and method for a semiconductor chip are proposed. The device includes a conveyor unit that transports a semiconductor chip and a substrate, and a bonding head that includes a bonding tool for applying a pressure to the chip and substrate, a laser beam generator for emitting a laser beam, a thermal imaging camera for measuring temperatures of the surfaces of semiconductor chip and substrate, and a compression unit for controlling a pressure applied by the bonding tool and a position thereof, wherein the compression unit includes a mount on which the bonding tool is detachably mounted, and a servo motor and a load cell that apply a pressure to the mount or control a position thereof. The servo motor is controlled with two values for pressure application and positioning.

An automatic assembling system, comprising: a robot performing an operation of inserting a first member into a second member; a force sensor for detecting an insertion force exerted on the first member by the robot; and a controller for controlling the insertion force with a closed-loop feedback control according to a difference between the insertion force detected by the force sensor and a predetermined insertion force, so that the insertion force is less than the predetermined insertion force to protect the first member and/or the second member from damage due to an overlarge insertion force. The present invention also is directed to a method for automatically assembling a product.

An apparatus for stacking semiconductor chips includes a push member configured to apply pressure to a semiconductor chip disposed on a substrate. The push member includes a push plate configured to contact the semiconductor chip, and a push rod connected to the push plate. The push plate includes a central portion having an area smaller than an area of an upper side of the semiconductor chip, and a plurality of protrusions disposed at respective ends of the central portion.

A method of operating a thermocompression bonding system is provided. The method includes the steps of: (a) applying a first level of bond force to a semiconductor element while first conductive structures of the semiconductor element are in contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; (b) measuring a lateral force related to contact between (i) ones of the first conductive structures and (ii) corresponding ones of the second conductive structures; (c) determining a corrective motion to be applied based on the lateral force measured in step (b); and (d) applying the corrective motion determined in step (c).

A production of voids between substrates is prevented when the substrates are bonded together, and the substrates are bonded together at a high positional precision while suppressing a strain. A method for bonding a first substrate and a second substrate includes a step of performing hydrophilization treatment to cause water or an OH containing substance to adhere to bonding surface of the first substrate and the bonding surface of the second substrate, a step of disposing the first substrate and the second substrate with the respective bonding surfaces facing each other, and bowing the first substrate in such a way that a central portion of the bonding surface protrudes toward the second substrate side relative to an outer circumferential portion of the bonding surface, a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate at the respective central portions, and a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate across the entirety of the bonding surfaces, decreasing a distance between the outer circumferential portion of the first substrate and an outer circumferential portion of the second substrate with the respective central portions abutting each other at a pressure that maintains a non-bonded condition.

Provided is a method for setting the conditions for heating a semiconductor chip during bonding of the semiconductor chip using an NCF, wherein a heating start temperature and a rate of temperature increase are set on the basis of a viscosity characteristic map that indicates changes in viscosity with respect to temperature of the NCF at various rates of temperature increase and a heating start temperature characteristic map that indicates changes in viscosity with respect to temperature of the NCF when the heating start temperature is changed at the same rate of temperature increase.

A bonding apparatus and method includes: a stage configured to fix a first electric component; a pressing unit configured to press a conductive adhesive film and a second electric component onto the first electric component; a driver configured to control movement of the pressing unit along a direction; and a plurality of sensors at different positions on the stage and configured to sense a change in capacitance with the pressing unit, wherein the pressing unit includes a flat metal material in first regions facing the plurality of sensors.

Provided is a laser reflow apparatus for reflowing electronic components on a substrate disposed on a stage, the apparatus including: a laser emission unit comprised of a plurality of laser modules for emitting a laser beam having a flat top output profile in at least one section of the substrate on which the electronic components are disposed; a camera unit comprising at least one camera module for capturing a reflowing process of the electronic components performed by the laser beam; and a laser output control unit configured to generate a control signal for independently controlling the respective laser modules of the laser emission unit based on a signal output from the camera unit and apply the control signal to the laser emission unit.

A parameter adjustment method includes an acquisition process and a parameter changing process. The acquisition process acquires, from an inspection apparatus configured to inspect a combined substrate in which the first substrate and the second substrate are bonded by the bonding apparatus, an inspection result indicating a direction and a degree of distortion occurring in the combined substrate. The parameter changing process changes at least one of multiple parameters including at least one of the gap, an attraction pressure of the first substrate by the first holder, an attraction pressure of the second substrate by the second holder or a pressing force on the first substrate by the striker, based on trend information indicating a tendency of a change in the direction and the degree of the distortion when each of the multiple parameters is changed and the inspection result acquired in the acquiring of the inspection result.

A method for bonding a first substrate to a second substrate on mutually facing contact surfaces of the substrates, wherein the first substrate is mounted on a first chuck and the second substrate is mounted on a second chuck, and wherein a plate is arranged between the second substrate and the second chuck, wherein the second substrate with the plate is deformed with respect to the second chuck before and/or during the bonding. Furthermore, the present invention relates to a corresponding device and a corresponding plate.