A semiconductor package includes a metallic pad and leads spaced from the metallic pad by a gap, the metallic pad including a roughened surface. The semiconductor package further includes a semiconductor die including bond pads, and an adhesive between the roughened surface of the metallic pad and the semiconductor die, therein bonding the semiconductor die to the metallic pad, wherein the adhesive includes a resin. The metallic pad further includes a groove surrounding the semiconductor die on the roughened surface, the groove having a surface roughness less than a surface roughness of the roughened surface of the metallic pad.

A method comprises heating a first electrically conductive layer that is to be electrically contacted, and that is arranged on a first element, and pressing a first end of a bonding wire on the first electrically conductive layer by exerting pressure to the first end of the bonding wire, and further by exposing the first end of the bonding wire to ultrasonic energy, thereby deforming the first end of the bonding wire and creating a permanent substance-to-substance bond between the first end of the bonding wire and the first electrically conductive layer. The bonding wire either comprises a rounded cross section with a diameter of at least 125 m or a rectangular cross section with a first width of at least 500 m and a first height of at least 50 m.

There is provided a bonding method capable of accurately positioning a bonding stage. According to an aspect of the present invention, a bonding method using a bonding apparatus including a rotation drive mechanism for rotating a bonding stage 1 about a -axis includes the steps of: (e) locking the bonding stage with respect to the -axis, and bonding a wire or bump onto a certain area of a substrate held on the bonding stage; (f) unlocking the bonding stage with respect to the -axis, and rotating the bonding stage about the -axis with the rotation drive mechanism; and (g) locking the bonding stage with respect to the -axis, and bonding a wire or bump onto a remaining region of the substrate.

A bonding apparatus has a bonding platform including a top plate for supporting a fragile semiconductor substrate during interconnect bonding operations conducted on the substrate. Vacuum holes situated on the top plate, forming a first vacuum section, a second vacuum section, and a third vacuum section located between the first and second vacuum sections, generate vacuum suction forces on the substrate during bonding. Individually controllable first, second and third vacuum supplies are connected to the first, second and third vacuum sections respectively. The first and second vacuum supplies cooperate at a first bonding position to generate a vacuum suction force at the first and second vacuum sections, and the second and third vacuum supplies cooperate at a second bonding to position to generate a vacuum suction force at the second and third vacuum sections.

In order to easily and accurately measure an offset for wire bonding and improve precision of wire bonding, a wiring bonding apparatus includes a first imaging unit, a bonding tool, a moving mechanism, a reference member, a second imaging unit arranged on the opposite side to the bonding tool and the first imaging unit with respect to a reference surface, and a control unit. The first imaging unit detects a position of an optical axis of the first image capture unit with respect to a position of the reference member, the second imaging unit detects the position of the reference member when moving the bonding tool above the reference member according to pre-stored offset values, and detects a position of a ball-shaped tip section of a wire, and the control unit measures a change in offset between the bonding tool and the first imaging unit based on each detection result.

A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 m or more and 1.3 m or less.

A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 m or more and 1.3 m or less.

Bonding processing for a plurality of bonding points of different distances with respect to a reference position (origin) of an object to be bonded without changing a moving distance of bonding means is provided. The bonding means, a bonding stage having a work-holder and a rotary mechanism unit for rotating the work-holder, and a control unit for controlling rotation of the work-holder are provided. The bonding means is movable relative to a placement surface of the work-holder in a reference orientation and has a reference position on its moving direction. The plurality of bonding points include bonding points of different separation distances from the reference position along the moving direction while the object to be bonded is being held to the work-holder in the reference orientation. The control unit corrects differences in the separation distances of the plurality of bonding points by controlling rotation of the work-holder.

A method of operating a wire bonding machine is provided. The method includes the steps of: (a) supporting a substrate on a material handling system of the wire bonding machine; (b) changing a bend profile of the substrate; and (c) securing, after step (b), the substrate against a support structure of the wire bonding machine using a clamping element of the wire bonding machine, the support structure for supporting the substrate during a wire bonding operation, and the clamping element for securing the substrate to the support structure during the wire bonding operation.

Provided is a bonding apparatus including a bonding stage 83 for heating a substrate (lead frame) 61 placed on the upper surface thereof or a semiconductor die 63 mounted on the substrate (lead frame) 61, an imaging device 20 arranged above the bonding stage 83 to image the substrate 61 placed on the bonding stage 83 or the semiconductor die 63 mounted on the substrate 61, and a standing wave generating device 35 for generating an ultrasonic standing wave in the space between the upper surface of the bonding stage 83 and the imaging device 20. This improves the accuracy of image position detection by the imaging device with a simple structure.