Patent classifications
H01L2224/80004
MICRO DEVICE INTEGRATION INTO SYSTEM SUBSTRATE
Post-processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structures such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. Dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with transferred micro devices. Color conversion layers may be integrated into the system substrate to create different outputs from the micro devices.
METHOD AND DEVICE FOR BONDING OF CHIPS
A method and device for bonding chips onto a substrate or onto further chips. The chips are bonded onto the substrate or the further chips by means of a direct bond.
Packages with Si-substrate-free Interposer and Method Forming Same
A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming an insulation layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, and bonding a device to the insulation layer and a portion of the plurality of bond pads through hybrid bonding.
Method for transferring micro device
A method for transferring a micro device includes: preparing a carrier substrate with the micro device thereon in which an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head comprising a force-adjustable glue layer thereon; forming a liquid layer on a receiving substrate; reducing the grip force of the force-adjustable glue layer of the transfer head to be smaller than a force attaching the micro device to the receiving substrate; placing the micro device over the receiving substrate such that the micro device is in contact with the liquid layer and is gripped by a capillary force; and moving the transfer head away from the receiving substrate such that the micro device is detached from the transfer head and is stuck to the receiving substrate.
Method for transferring micro device
A method for transferring a micro device is provided. The method includes: preparing a carrier substrate with the micro device thereon, wherein an adhesive layer is between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head; forming a liquid layer on a receiving substrate; and placing the micro device over the receiving substrate by the transfer head such that the micro device is in contact with the liquid layer and is gripped by a capillary force; and moving the transfer head away from the receiving substrate such that the micro device is detached from the transfer head and is stuck to the receiving substrate.
METHODS FOR REUSING SUBSTRATES DURING MANUFACTURE OF A BONDED ASSEMBLY INCLUDING A LOGIC DIE AND A MEMORY DIE
A semiconductor structure includes a memory die bonded to a support die. The memory die includes an alternating stack of insulating layers and electrically conductive layers located over a first single crystalline semiconductor layer, and memory stack structures extending through the alternating stack and containing respective memory film and a respective vertical semiconductor channel including a single crystalline channel semiconductor material. The support die includes a peripheral circuitry. Substrates employed to provide the memory die and the support die can be reused by replacing one of the substrates with an alternative low-cost substrate that provides structural support to the bonded assembly.
Semiconductor package
A semiconductor package includes: a lower semiconductor chip including a first semiconductor substrate, which includes a first semiconductor device on an active surface thereof and a protrusion defined by a recess region on an inactive surface thereof opposite to the active surface, a plurality of external connecting pads on a bottom surface of the first semiconductor substrate, and a plurality of through-electrodes electrically connected to the plurality of external connecting pads; and at least one upper semiconductor chip stacked on the protrusion of the lower semiconductor chip and electrically connected to the plurality of through-electrodes, the at least one upper semiconductor chip including a second semiconductor substrate which includes a second semiconductor device on an active surface thereof.
Chip package structure and method for forming the same
A method for forming a chip package structure is provided. The method includes partially removing a first redistribution layer to form an alignment trench in the first redistribution layer. The alignment trench surrounds a bonding portion of the first redistribution layer. The method includes forming a liquid layer over the bonding portion. The method includes disposing a chip structure over the liquid layer, wherein a first width of the bonding portion is substantially equal to a second width of the chip structure. The method includes evaporating the liquid layer. The chip structure is in direct contact with the bonding portion after the liquid layer is evaporated.
Packages with Si-substrate-free interposer and method forming same
A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming an insulation layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, and bonding a device to the insulation layer and a portion of the plurality of bond pads through hybrid bonding.
Micro device integration into system substrate
Post-processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structures such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. Dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with transferred micro devices. Color conversion layers may be integrated into the system substrate to create different outputs from the micro devices.