A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of second bond pads protruding from the second dielectric layer. The first die is bonded to the second die such that the plurality of second bond pads protrude into the apertures in the first dielectric layer to establish respective metallurgical bonds with the plurality of first bond pads. A reduction in the distance between the respective bond pads of the dies results in a lower temperature for establishing a hybrid bond.

A method of manufacturing an array of planar wafer level metal posts includes plating an array of posts within a photoresist (PR) pattern mold on a substrate of a first wafer. Stripping the PR pattern mold from the substrate and array of posts. Applying an oxide layer, at a temperature of below 150 degrees Celsius, over a surface of the first wafer. Applying chemical-mechanical polishing (CMP) to planarize the oxide layer and the array of posts.

A metal-dielectric bonding method includes providing a first semiconductor structure including a first semiconductor layer, a first dielectric layer on the first semiconductor layer, and a first metal layer on the first dielectric layer, where the first metal layer has a metal bonding surface facing away from the first semiconductor layer; planarizing the metal bonding surface; applying a plasma treatment on the metal bonding surface; providing a second semiconductor structure including a second semiconductor layer, and a second dielectric layer on the second semiconductor layer, where the second dielectric layer has a dielectric bonding surface facing away from the second semiconductor layer; planarizing the dielectric bonding surface; applying a plasma treatment on the dielectric bonding surface; and bonding the first semiconductor structure with the second semiconductor structure by bonding the metal bonding surface with the dielectric bonding surface.

Disclosed is a semiconductor device and method of manufacturing a semiconductor device that includes planarizing surfaces of a semiconductor substrate and a carrier substrate and then placing the semiconductor substrate on the carrier substrate such that the planarized surfaces of each are adjoining and allowing the semiconductor substrate to bond to the carrier substrate using a Van der Waals force. The method also includes forming a metal filled trench around the semiconductor substrate and in contact with the carrier substrate, which can also be formed of metal. The metal filled trench and carrier substrate together form a metal cage-like structure around the semiconductor substrate that can serve as a heat sink, integrated heat spreader, and Electro-Magnetic Interference shield for the semiconductor substrate.

A method of manufacturing an array of planar wafer level metal posts includes plating an array of posts within a photoresist (PR) pattern mold on a substrate of a first wafer. Stripping the PR pattern mold from the substrate and array of posts. Applying an oxide layer, at a temperature of below 150 degrees Celsius, over a surface of the first wafer. Applying chemical-mechanical polishing (CMP) to planarize the oxide layer and the array of posts.

A semiconductor device and electronic system, the device including a cell structure stacked on a peripheral circuit structure, wherein the cell structure includes a first interlayer dielectric layer and first metal pads exposed at the first interlayer dielectric layer and connected to gate electrode layers and channel regions, the peripheral circuit structure includes a second interlayer dielectric layer and second metal pads exposed at the second interlayer dielectric layer and connected to a transistor, the first metal pads include adjacent first and second sub-pads, the second metal pads include adjacent third and fourth sub-pads, the first and third sub-pads are coupled, and a width of the first sub-pad is greater than that of the third sub-pad, and the second sub-pad and the fourth sub-pad are coupled, and a width of the fourth sub-pad is greater than that of the second sub-pad.

A method for manufacturing a semiconductor device is provided, including: preparing a first chip forming portion having a first semiconductor substrate, first metal pads provided at the substrate and a first circuit electrically connected to at least a part of the pads, and a second chip forming portion having a second semiconductor substrate, second metal pads provided at substrate and a second circuit electrically connected to at least a part of the pads; bonding the first and the second chip forming portions while joining the first and the second pads to form a bonding substrate having a non-bonded region between the first and the second chip forming portions at an outer peripheral portion thereof; and filling an insulating film into the non-bonded region, at least a part of the insulating film containing at least one selected from the group consisting of silicon nitride and nitrogen-containing silicon carbide.

Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.

A semiconductor device and electronic system, the device including a cell structure stacked on a peripheral circuit structure, wherein the cell structure includes a first interlayer dielectric layer and first metal pads exposed at the first interlayer dielectric layer and connected to gate electrode layers and channel regions, the peripheral circuit structure includes a second interlayer dielectric layer and second metal pads exposed at the second interlayer dielectric layer and connected to a transistor, the first metal pads include adjacent first and second sub-pads, the second metal pads include adjacent third and fourth sub-pads, the first and third sub-pads are coupled, and a width of the first sub-pad is greater than that of the third sub-pad, and the second sub-pad and the fourth sub-pad are coupled, and a width of the fourth sub-pad is greater than that of the second sub-pad.

A package structure includes a first die, a die stack structure bonded to the first die, a support structure and an insulation structure. The support structure is disposed on the die stack structure, and a sidewall of the support structure is laterally shifted from a sidewall of the die stack structure. The insulation structure is disposed on the first die and laterally wraps around the die stack structure and the support structure.