A microelectronic structure with through substrate vias (TSVs) and method for forming the same is disclosed. The microelectronic structure can include a bulk semiconductor with a via structure. The via structure can have a first and second conductive portion. The via structure can also have a barrier layer between the first conductive portion and the bulk semiconductor. The structure can have a second barrier layer between the first and second conductive portions. The second conductive portion can extend from the second barrier layer to the upper surface of the bulk semiconductor. The microelectronic structure containing TSVs is configured so that the microelectronic structure can be bonded to a second element or structure.

A bonding apparatus that performs a bonding operation of bonding a bonding object to a bonding target object, including a driving unit configured to perform driving such that the bonding object is bonded to the bonding target object, and a control unit configured to control the bonding operation such that a bonded shape of the bonding object after the bonding object is bonded to the bonding target object achieves a predetermined distortion shape.

A method for manufacturing integrated circuits comprises assembling a first semiconductor wafer including a first interconnecting region and a second semiconductor wafer including a second interconnecting region, including placing the first interconnecting region in contact with the second interconnecting region in a contact interface, and machining the assembly, including bevel polishing the assembly of the first interconnecting region and the second interconnecting region, and removing a circumferential annular region of the contact interface.

A semiconductor structure includes a first die, a first bonding structure, a first encapsulant, a second die, a second bonding structure and a second encapsulant. The first bonding structure includes a first dielectric layer and a first conductive pad in the first dielectric layer. The first encapsulant laterally encapsulates the first die and the first dielectric layer. The second bonding structure includes a second dielectric layer and second conductive pads in the second dielectric layer. The second encapsulant laterally encapsulates the second die and the second dielectric layer. The first conductive pad is physically connected to one of the second conductive pads, opposite sidewalls of the first dielectric layer is within opposite sidewalls of the first die, opposite sidewalls of the second dielectric layer is within opposite sidewalls of the second die, and the first dielectric layer is physically connected to the second dielectric layer.