A semiconductor package includes: a first structure having a first insulating layer disposed on one surface, and first electrode pads and first dummy pads penetrating through the first insulating layer, a second structure having a second insulating layer having the other surface bonded to the one surface and the first insulating layer and disposed on the other surface, and second electrode pads and second dummy pads that penetrate through the second insulating layer, the second electrode pads being bonded to the first electrode pads, respectively, and the second dummy pads being bonded to the first dummy pads, respectively. In the semiconductor chip, ratios of surface areas per unit area of the first and second dummy pads to the first and second insulating layers on the one surface and the other surface gradually decrease toward sides of the first and second structures.

To provide a semiconductor device having a structure suitable for higher integration. This semiconductor device includes: a first semiconductor substrate; and a second semiconductor substrate. The first semiconductor substrate is provided with a first electrode including a first protruding portion and a first base portion. The first protruding portion includes a first abutting surface. The first base portion is linked to the first protruding portion and has volume greater than volume of the first protruding portion. The second semiconductor substrate is provided with a second electrode including a second protruding portion and a second base portion. The second protruding portion includes a second abutting surface that abuts the first abutting surface. The second base portion is linked to the second protruding portion and has volume greater than volume of the second protruding portion. The second semiconductor substrate is stacked on the first semiconductor substrate.

In an embodiment, a device includes: an interposer; a first integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a second integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a buffer layer around the first integrated circuit device and the second integrated circuit device, the buffer layer including a stress reduction material having a first Young's modulus; and an encapsulant around the buffer layer, the first integrated circuit device, and the second integrated circuit device, the encapsulant including a molding material having a second Young's modulus, the first Young's modulus less than the second Young's modulus.

The present application provides a method for manufacturing a semiconductor package with air gaps for reducing capacitive coupling between conductive features. The method comprises: providing a first substrate with an integrated circuit; forming a first stack of insulating layers with first protruding portions on the integrated circuit; removing a topmost insulating layer in the first stack of insulating layers; forming through holes in the first stack to form a first semiconductor structure; providing a second substrate with an integrated circuit; forming a second stack of insulating layers with second protruding portions on the integrated circuit; forming a recess portion in the first stack to form a second semiconductor structure; and bonding the first semiconductor structure with the second semiconductor structure, with an air gap formed from the recess portion.

A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first semiconductor device, a second semiconductor device, and an alignment material. The first semiconductor device has a first bonding layer, and the first bonding layer includes a first bond pad contacting an organic dielectric material. The second semiconductor device has a second bonding layer, and the second bonding layer includes a second bond pad contacting the organic dielectric material. The alignment material is between the first bonding layer and the second bonding layer.

A front-side peripheral region of a first wafer may be edge-trimmed by performing a first pre-bonding edge-trimming process. A second wafer to be bonded with the first wafer is provided. Optionally, a front-side peripheral region of the second wafer may be edge-trimmed by performing a second pre-bonding edge-trimming process. A front surface of the first wafer is bonded to a front surface of a second wafer to form a bonded assembly. A backside of the first wafer is thinned by performing at least one wafer thinning process. The first wafer and a front-side peripheral region of the second wafer may be edge-trimmed by performing a post-bonding edge-trimming process. The bonded assembly may be subsequently diced into bonded semiconductor chips.

In an embodiment, a device includes: an interposer; a first integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a second integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a buffer layer around the first integrated circuit device and the second integrated circuit device, the buffer layer including a stress reduction material having a first Young's modulus; and an encapsulant around the buffer layer, the first integrated circuit device, and the second integrated circuit device, the encapsulant including a molding material having a second Young's modulus, the first Young's modulus less than the second Young's modulus.

A semiconductor structure includes a stacked die including a lower portion and an upper portion stacked upon the lower portion. The lower portion includes a first patterned conductive pad, a first conductive connector passing through the first patterned conductive pad, a first patterned dielectric layer covering the first patterned conductive pad and laterally isolating the first conductive connector from the first patterned conductive pad. The upper portion includes a second conductive connector bonded to the first conductive connector, and a second patterned dielectric layer bonded to the first patterned dielectric layer.

A method of manufacturing an electronic device, including: a) forming a plurality of chips, each including a plurality of connection areas and at least one first pad; b) forming a transfer substrate including, for each chip, a plurality of connection areas and at least one second pad, one of the first and second pads being a permanent magnet and the other one of the first and second pads being either a permanent magnet or made of a ferromagnetic material; and c) affixing the chips to the transfer substrate to connect the connection areas of the chips to the connection areas of the transfer substrate, by using the magnetic force between the pads to align the connection areas of the chips with the corresponding connection areas of the transfer substrate.

A bonding structure, a package structure, and a method for manufacturing a package structure are provided. The package structure includes a first substrate, a first passivation layer, a first conductive layer, and a first conductive bonding structure. The first passivation layer is disposed on the first substrate and has an upper surface. The first passivation layer and the first substrate define a first cavity. The first conductive layer is disposed in the first cavity and has an upper surface. A portion of the upper surface of the first conductive layer is below the upper surface of the first passivation layer. The first conductive bonding structure is disposed on the first conductive layer.