A package includes a carrier substrate, a first die, and a second die. The first die includes a first bonding layer, a second bonding layer opposite to the first bonding layer, and an alignment mark embedded in the first bonding layer. The first bonding layer is fusion bonded to the carrier substrate. The second die includes a third bonding layer. The third bonding layer is hybrid bonded to the second bonding layer of the first die.

Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a conductor/insulator stack over a substrate, forming a dielectric layer of a dielectric material including atomic hydrogen over a part of the conductor/insulator stack, and performing a thermal process to release the atomic hydrogen from the dielectric material and diffuse the atomic hydrogen into the conductor/insulator stack.

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. The second semiconductor structure further includes a second bonding layer including second bonding contacts. At least one second bonding contact is in contact with a respective second interconnect. At least another second bonding contact is separated from the second interconnects. The semiconductor device further includes a bonding interface between the first and second bonding layers. Each first bonding contact is in contact with one of the second bonding contacts at the bonding interface.

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. The second semiconductor structure further includes a second bonding layer including second bonding contacts. At least one second bonding contact is in contact with a respective second interconnect. At least another second bonding contact is separated from the second interconnects. The semiconductor device further includes a bonding interface between the first and second bonding layers. Each first bonding contact is in contact with one of the second bonding contacts at the bonding interface.

A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

A package includes a first die, a second die, an encapsulant, and a redistribution structure. The first die has a first capacitor embedded therein. The second die has a second capacitor embedded therein. The second die is stacked on the first die. The first capacitor is electrically connected to the second capacitor. The encapsulant laterally encapsulates the second die. The redistribution structure is disposed on the second die and the encapsulant.

Embodiments of die-to-die bonding schemes of three-dimensional (3D) memory devices are provided. In an example, a method for bonding includes dicing one or more device wafers to obtain a plurality of dies, placing at least one first die of the plurality of dies onto a first carrier wafer and at least one second die of the plurality of dies onto a second carrier wafer, and bonding the at least one first die each with a respective second die. The at least one first die and the at least one second die each are functional. In some embodiments, the method also includes removing, respectively, the first carrier wafer and the second carrier wafer to form a plurality of bonded semiconductor devices each having one of the first dies and the respective second die.

A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

A semiconductor package may include a substrate, a chip stack disposed on the substrate, the chip stack including a plurality of first semiconductor chips vertically stacked on the substrate, a second semiconductor chip disposed on the substrate and horizontally spaced apart from the chip stack, and a third semiconductor chip disposed on the second semiconductor chip. An upper portion of the second semiconductor chip and a lower portion of the third semiconductor chip may contain an insulating element. The upper portion of the second semiconductor chip and the lower portion of the third semiconductor chip may contact each other at an interface between the second semiconductor chip and the third semiconductor chip and may constitute a single object formed of a same material.

A bonded structure can comprise a first element and a second element. The first element has a first dielectric layer including a first bonding surface and at least one first side surface of the first element. The second element has a second dielectric layer including a second bonding surface and at least one second side surface of the second element. The second bonding surface of the second element is directly bonded to the first bonding surface of the first element without an adhesive.