To reduce the influence of noise in the imaging device configured with the plurality of semiconductor chips. A first semiconductor chip includes a signal input transistor in which an input signal which is a signal corresponding to incident light is input to a control terminal, a reference input transistor which forms a differential pair along with the signal input transistor and in which a reference signal is input to a control terminal, a first signal line which delivers a change in a current flowing in one of the signal input transistor and the reference input transistor as a result of comparison between the input signal and the reference signal when the current is changed in accordance with a difference between the input signal and the reference signal, and a first pad which is electrically connected to the first signal line. A second semiconductor chip includes a processing circuit which processes the result of the comparison, a second signal line which is electrically connected to the processing circuit and delivers the result of the comparison to the processing circuit, and a second pad which is electrically connected to the second signal line and the first pad.

Implementations of a clip may include a die attach portion including at least one protrusion extending from the die attach portion and a lead frame alignment portion including at least one alignment feature. The at least one alignment feature may be configured to couple into at least one hole in a lead frame thereby aligning the clip with the lead frame. The at least one protrusion may be configured to couple into at least one recess in the die.

A direct transfer apparatus includes a dot matrix transfer head, which includes an impact wire housing and a plurality of impact wires disposed within the impact wire housing and extending out of the impact wire housing. A guide head is attached to the impact wire housing. The guide head includes multiple holes configured to arrange the plurality of impact wires in a matrix configuration, the matrix configuration being a matched-pitch configuration.

A production of voids between substrates is prevented when the substrates are bonded together, and the substrates are bonded together at a high positional precision while suppressing a strain. A method for bonding a first substrate and a second substrate includes a step of performing hydrophilization treatment to cause water or an OH containing substance to adhere to bonding surface of the first substrate and the bonding surface of the second substrate, a step of disposing the first substrate and the second substrate with the respective bonding surfaces facing each other, and bowing the first substrate in such a way that a central portion of the bonding surface protrudes toward the second substrate side relative to an outer circumferential portion of the bonding surface, a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate at the respective central portions, and a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate across the entirety of the bonding surfaces, decreasing a distance between the outer circumferential portion of the first substrate and an outer circumferential portion of the second substrate with the respective central portions abutting each other at a pressure that maintains a non-bonded condition.

A production of voids between substrates is prevented when the substrates are bonded together, and the substrates are bonded together at a high positional precision while suppressing a strain. A method for bonding a first substrate and a second substrate includes a step of performing hydrophilization treatment to cause water or an OH containing substance to adhere to bonding surface of the first substrate and the bonding surface of the second substrate, a step of disposing the first substrate and the second substrate with the respective bonding surfaces facing each other, and bowing the first substrate in such a way that a central portion of the bonding surface protrudes toward the second substrate side relative to an outer circumferential portion of the bonding surface, a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate at the respective central portions, and a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate across the entirety of the bonding surfaces, decreasing a distance between the outer circumferential portion of the first substrate and an outer circumferential portion of the second substrate with the respective central portions abutting each other at a pressure that maintains a non-bonded condition.

To reduce the influence of noise in the imaging device configured with the plurality of semiconductor chips. A first semiconductor chip includes a signal input transistor in which an input signal which is a signal corresponding to incident light is input to a control terminal, a reference input transistor which forms a differential pair along with the signal input transistor and in which a reference signal is input to a control terminal, a first signal line which delivers a change in a current flowing in one of the signal input transistor and the reference input transistor as a result of comparison between the input signal and the reference signal when the current is changed in accordance with a difference between the input signal and the reference signal, and a first pad which is electrically connected to the first signal line. A second semiconductor chip includes a processing circuit which processes the result of the comparison, a second signal line which is electrically connected to the processing circuit and delivers the result of the comparison to the processing circuit, and a second pad which is electrically connected to the second signal line and the first pad.

To reduce the influence of noise in the imaging device configured with the plurality of semiconductor chips. A first semiconductor chip includes a signal input transistor in which an input signal which is a signal corresponding to incident light is input to a control terminal, a reference input transistor which forms a differential pair along with the signal input transistor and in which a reference signal is input to a control terminal, a first signal line which delivers a change in a current flowing in one of the signal input transistor and the reference input transistor as a result of comparison between the input signal and the reference signal when the current is changed in accordance with a difference between the input signal and the reference signal, and a first pad which is electrically connected to the first signal line. A second semiconductor chip includes a processing circuit which processes the result of the comparison, a second signal line which is electrically connected to the processing circuit and delivers the result of the comparison to the processing circuit, and a second pad which is electrically connected to the second signal line and the first pad.

Integrated circuits may be assembled by placing a batch of integrated circuit (IC) die on a leadframe. Each of the IC die includes a magnetically responsive structure that may be an inherent part of the IC die or may be explicitly added. The IC die are then agitated to cause the IC die to move around on the leadframe. The IC die are captured in specific locations on the leadframe by an array of magnetic domains that produce a magnetic response from the plurality of IC die. The magnetic domains may be formed on the lead frame, or may be provided by a magnetic chuck positioned adjacent the leadframe.

A semiconductor device structure is provided. The semiconductor device structure includes a first polymer layer formed between a first substrate and a second substrate, and a first conductive layer formed over the first polymer. The semiconductor device includes a first through substrate via (TSV) formed over the first conductive layer, and the conductive layer is in direct contact with the first TSV and the first polymer.

A semiconductor device structure is provided. The semiconductor device structure includes a first polymer layer formed between a first substrate and a second substrate, and a first conductive layer formed over the first polymer. The semiconductor device includes a first through substrate via (TSV) formed over the first conductive layer, and the conductive layer is in direct contact with the first TSV and the first polymer.