A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure.

A first conductive material having a first hardness is disposed within a recess or opening of a microelectronic component, in a first preselected pattern, and forms a first portion of an interconnect structure. A second conductive material having a second hardness different from the first hardness is disposed within the recess or opening in a second preselected pattern and forms a second portion of the interconnect structure.

Embodiments relate to the field of semiconductors, and provide a semiconductor structure and a method for fabricating the same. The semiconductor structure includes a first wafer and a second wafer. A surface of the first wafer has a first electrode plate, a first dielectric layer and a first dummy pad stacked in sequence to constitute a capacitor; and the surface of the first wafer further has a first functional pad, and the first functional pad and the first dummy pad are arranged on a same layer. The second wafer is bonded to the first wafer, and a surface of the second wafer has a second dummy pad and a second functional pad arranged on a same layer. The first dummy pad is bonded to the second dummy pad, and the first functional pad is bonded to the second functional pad.

Provided is a semiconductor package including a lower semiconductor chip including a top surface and a bottom surface that are opposite to each other, an upper semiconductor chip on the top surface of the lower semiconductor chip and including a bottom surface and a top surface that are opposite to each other, a dielectric layer between the top surface of the lower semiconductor chip and the bottom surface of the upper semiconductor chip, a lower dielectric layer between the dielectric layer and the bottom surface of the upper semiconductor chip, an upper dielectric layer on the top surface of the upper semiconductor chip, and a connection structure that penetrates the dielectric layer and the lower dielectric layer, the connection structure being connected to the lower semiconductor chip and the upper semiconductor chip, wherein a width of the bottom surface of the upper semiconductor chip is greater than a width of the upper dielectric layer in a first direction, and wherein the first direction is parallel to the top surface of the lower semiconductor chip.