A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.

A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.

A package structure and method of manufacturing is provided, whereby a bonding dielectric material layer is provided at a back side of a wafer, a bonding dielectric material layer is provided at a front side of an adjoining wafer, and wherein the bonding dielectric material layers are fusion bonded to each other.

In an embodiment, a method includes: bonding a back side of a first memory device to a front side of a second memory device with dielectric-to-dielectric bonds and with metal-to-metal bonds; after the bonding, forming first conductive bumps through a first dielectric layer at a front side of the first memory device, the first conductive bumps raised from a major surface of the first dielectric layer; testing the first memory device and the second memory device using the first conductive bumps; and after the testing, attaching a logic device to the first conductive bumps with reflowable connectors.

Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method comprises forming a plurality of semiconductor devices over a central region of a semiconductor wafer. The semiconductor wafer comprises a peripheral region laterally surrounding the central region and a circumferential edge disposed within the peripheral region. The semiconductor wafer comprises a notch disposed along the circumferential edge. Forming a stack of inter-level dielectric (ILD) layers over the semiconductor devices and laterally within the central region. Forming a bonding support structure over the peripheral region such that the bonding support structure comprises a bonding structure notch disposed along a circumferential edge of the bonding support structure. Forming the bonding support structure includes disposing the semiconductor wafer over a lower plasma exclusion zone (PEZ) ring that comprises a PEZ ring notch disposed along a circumferential edge of the lower PEZ ring.

Embodiments herein relate to systems, apparatuses, or processes for hybrid bonding two dies, where at least one of the dies has a top layer to be hybrid bonded includes one or more copper pad and a top oxide layer surrounding the one or more copper pad, with another layer beneath the oxide layer that includes carbon atoms. The top oxide layer and the other carbide layer beneath may form a combination gradient layer that goes from a top of the top layer that is primarily an oxide to a bottom of the other layer that is primarily a carbide. The top oxide layer may be performed by exposing the carbide layer to a plasma treatment. Other embodiments may be described and/or claimed.

In an embodiment, a device includes: an interposer; a first integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a second integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a buffer layer around the first integrated circuit device and the second integrated circuit device, the buffer layer including a stress reduction material having a first Young's modulus; and an encapsulant around the buffer layer, the first integrated circuit device, and the second integrated circuit device, the encapsulant including a molding material having a second Young's modulus, the first Young's modulus less than the second Young's modulus.

In an embodiment, a device includes: an interposer; a first integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a second integrated circuit device bonded to the interposer with dielectric-to-dielectric bonds and with metal-to-metal bonds; a buffer layer around the first integrated circuit device and the second integrated circuit device, the buffer layer including a stress reduction material having a first Young's modulus; and an encapsulant around the buffer layer, the first integrated circuit device, and the second integrated circuit device, the encapsulant including a molding material having a second Young's modulus, the first Young's modulus less than the second Young's modulus.

A method of manufacturing a package structure is provided. The method of manufacturing a package structure comprises receiving a first semiconductor structure and a second semiconductor structure; forming an isolation layer on each semiconductor structure; forming at least one supporting structure and at least one pad trench in the isolation layer; filling the pad trench with electrically conductive material; plariarizing the isolation layer and the electrically conductive material to form bonding pads in a bonding layer on each semiconductor structure; and bonding the semiconductor structures.