A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes top, bottom, and middle tiers. The bottom tier includes a first interconnect structure overlying a first semiconductor substrate, and a first front-side bonding structure overlying the first interconnect structure. The middle tier interposed between and electrically coupled to the top and bottom tiers includes a second interconnect structure overlying a second semiconductor substrate, a second front-side bonding structure interposed between the top tier and the second interconnect structure, and a back-side bonding structure interposed between the second semiconductor substrate and the first front-side bonding structure. A bonding feature of the second front-side bonding structure includes a first bonding via in contact with the second interconnect structure, a first bonding contact overlying the first bonding via, and a barrier layer interface between a bottom of the first bonding contact and a top of the first bonding via.

A semiconductor structure includes a memory die bonded to a logic die. The memory die includes an alternating stack of insulating layers and electrically conductive layers, a semiconductor material layer located on a distal surface of the alternating stack, a dielectric spacer layer located on a distal surface of the semiconductor material layer, memory opening fill structures vertically extending through the alternating stack, through the semiconductor material layer, and at least partly through the dielectric spacer layer, and a source layer located on a distal surface of the dielectric spacer layer and contacting pillar portions of the vertical semiconductor channels that are embedded within the dielectric spacer layer.

In an embodiment, a device includes: a gallium nitride device on a substrate, the gallium nitride device including an electrode; a dielectric layer on and around the gallium nitride device; an isolation layer on the dielectric layer; a semiconductor layer on the isolation layer, the semiconductor layer including a silicon device; a through via extending through the semiconductor layer, the isolation layer, and the dielectric layer, the through via electrically and physically coupled to the electrode of the gallium nitride device; and an interconnect structure on the semiconductor layer, the interconnect structure including metallization patterns electrically coupled to the through via and the silicon device.

A structure and a method of forming are provided. The structure includes a first dielectric layer overlying a first substrate. A first connection pad is disposed in a top surface of the first dielectric layer and contacts a first redistribution line. A first dummy pad is disposed in the top surface of the first dielectric layer, the first dummy pad contacting the first redistribution line. A second dielectric layer overlies a second substrate. A second connection pad and a second dummy pad are disposed in the top surface of the second dielectric layer, the second connection pad bonded to the first connection pad, and the first dummy pad positioned in a manner that is offset from the second dummy pad so that the first dummy pad and the second dummy pad do not contact each other.

A structure and a method of forming are provided. The structure includes a first dielectric layer overlying a first substrate. A first connection pad is disposed in a top surface of the first dielectric layer and contacts a first redistribution line. A first dummy pad is disposed in the top surface of the first dielectric layer, the first dummy pad contacting the first redistribution line. A second dielectric layer overlies a second substrate. A second connection pad and a second dummy pad are disposed in the top surface of the second dielectric layer, the second connection pad bonded to the first connection pad, and the first dummy pad positioned in a manner that is offset from the second dummy pad so that the first dummy pad and the second dummy pad do not contact each other.

Alignment of a first wafer bonded to a second wafer can be determined using electrical wafer alignment methods. A wafer stack can be formed by overlaying a second wafer over a first wafer such that second metal bonding pads of the second wafer contact first metal bonding pads of the first wafer. A leakage current or a capacitance measurement step is performed between first alignment diagnostic structures in the first wafer and second alignment diagnostic structures in the second wafer for multiple mating pairs of first semiconductor dies in the first wafer and second semiconductor dies in the second wafer to determine the alignment.

Embodiments of the disclosure provide a sealing ring, a stacked structure, and a method for manufacturing a sealing ring. The sealing ring is arranged at a periphery of a device area of a chip, and includes an inner ring structure, a middle ring structure, and an outer ring structure. The middle ring structure is connected to the device area through a doped well. The doped well is located in part of a substrate corresponding to the inner ring structure and the middle ring structure, and is isolated from the inner ring structure.

Disclosed herein are methods for direct bonding. In some embodiments, the direct bonding method includes providing a first element having a first bonding surface, providing a second element having a second bonding surface, slightly etching the first bonding surface, treating the first bonding surface with a terminating liquid treatment to terminate the first bonding surface with a terminating species, and directly bonding the first bonding surface to the second bonding surface without the use of an intervening adhesive and without exposing the first bonding surface to plasma.

A metal-dielectric bonding method includes providing a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes: a first semiconductor layer including a complementary metal-oxide-semiconductor device, a first dielectric layer on the first semiconductor layer, and a first metal layer on the first dielectric layer, the first metal layer having a metal bonding surface. The metal bonding surface is planarized and a plasma treatment is applied thereto. The second semiconductor structure includes a second semiconductor layer including a pixel wafer, and a second dielectric layer on the second semiconductor layer, the second dielectric layer having a dielectric bonding surface. The dielectric bonding surface is planarized and a plasma treatment is applied thereto. The first and second semiconductor structures are bonded together by bonding the metal bonding surface with the dielectric bonding surface.

The present technology relates to a semiconductor device in which a MIM capacitive element can be formed without any process damage, and a method for manufacturing the semiconductor device. In a semiconductor device, wiring layers of a first multilayer wiring layer formed on a first semiconductor substrate and a second multilayer wiring layer formed on a second semiconductor substrate are bonded to each other by wafer bonding. The semiconductor device includes a capacitive element including an upper electrode, a lower electrode, and a capacitive insulating film between the upper electrode and the lower electrode. One electrode of the upper electrode and the lower electrode is formed with a first conductive layer of the first multilayer wiring layer and a second conductive layer of the second multilayer wiring layer. The present technology can be applied to a semiconductor device or the like formed by joining two semiconductor substrates, for example.