A method of transferring a micro device is provided. The method includes: aligning a transfer plate with the micro device thereon with a receiving substrate having a contact pad thereon such that the micro device is above or in contact with the contact pad; moving a combination of the transfer plate with the micro device thereon and the receiving substrate into a confined space with a relative humidity greater than or equal to about 85% so as to condense some water between the micro device and the contact pad; and attaching the micro device to the contact pad.

An industrial-scale apparatus, system, and method for handling precisely aligned and centered semiconductor wafer pairs for wafer-to-wafer aligning and bonding applications includes an end effector having a frame member and a floating carrier connected to the frame member with a gap formed therebetween, wherein the floating carrier has a semi-circular interior perimeter. The centered semiconductor wafer pairs are positionable within a processing system using the end effector under robotic control. The centered semiconductor wafer pairs are bonded together without the presence of the end effector in the bonding device.

A semiconductor package includes a first optical transceiver, a second optical transceiver, a third optical transceiver, and a plasmonic waveguide. The first optical transceiver, the second optical transceiver, and the third optical transceiver are stacked in sequential order. The first optical transceiver and the third optical transceiver respectively at least one optical input/output portion for transmitting and receiving an optical signal. The plasmonic waveguide includes a first segment, a second segment, and a third segment optically coupled to one another. The first segment is embedded in the first optical transceiver. The second segment extends through the second optical transceiver. The third segment is embedded in the third optical transceiver. The first segment is optically coupled to the at least one optical input/output portion of the first optical transceiver and the third segment is optically coupled to the at least one optical input/output portion of the third optical transceiver.

A method includes forming a first device die, which includes depositing a first dielectric layer, and forming a first metal pad in the first dielectric layer. The first metal pad includes a recess. The method further includes forming a second device die including a second dielectric layer and a second metal pad in the second dielectric layer. The first device die is bonded to the second device die, with the first dielectric layer being bonded to the second dielectric layer, and the first metal pad being bonded to the second metal pad.

A structure includes a first die and a second die. The first die includes a first bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first bonding layer. The first bonding layer extends over the first seal ring. The second die includes a second bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first bonding layer is bonded to the second bonding layer. An area interposed between the first seal ring and the second bonding layer is free of bond pads.

Post-processing steps for integrating of micro devices into system (receiver) substrate or improving the performance of the micro devices after transfer. Post processing steps for additional structures such as reflective layers, fillers, black matrix or other layers may be used to improve the out coupling or confining of the generated LED light. Dielectric and metallic layers may be used to integrate an electro-optical thin film device into the system substrate with transferred micro devices. Color conversion layers may be integrated into the system substrate to create different outputs from the micro devices.

A method includes patterning a cavity through a first passivation layer of a first package component, the first package component comprising a first semiconductor substrate and bonding the first package component to a second package component. The second package component comprises a second semiconductor substrate and a second passivation layer. Bonding the first package component to the second package component comprises directly bonding the first passivation layer to the second passivation layer; and reflowing a solder region of a conductive connector disposed in the cavity to electrically connect the first package component to the second package component.

A semiconductor structure and the manufacturing method thereof are provided. A semiconductor structure includes a first semiconductor substrate, a first interconnect structure, a first conductive pad, a first dielectric layer, and a first conductive connector. The first semiconductor substrate includes a plurality of first semiconductor devices therein. The first interconnect structure is disposed over the first semiconductor substrate and electrically coupled to the first semiconductor devices. The first conductive pad is disposed over and electrically coupled to the first interconnect structure. The first dielectric layer covers the first conductive pad and the first interconnect structure, and the first dielectric layer includes a portion extending through the first conductive pad. The first conductive connector is disposed on and electrically coupled to the first interconnect structure, and the first conductive connector extends through the portion of the first dielectric layer.

A semiconductor structure and the manufacturing method thereof are provided. A semiconductor structure includes a first semiconductor substrate, a first interconnect structure, a first conductive pad, a first dielectric layer, and a first conductive connector. The first semiconductor substrate includes a plurality of first semiconductor devices therein. The first interconnect structure is disposed over the first semiconductor substrate and electrically coupled to the first semiconductor devices. The first conductive pad is disposed over and electrically coupled to the first interconnect structure. The first dielectric layer covers the first conductive pad and the first interconnect structure, and the first dielectric layer includes a portion extending through the first conductive pad. The first conductive connector is disposed on and electrically coupled to the first interconnect structure, and the first conductive connector extends through the portion of the first dielectric layer.

An industrial-scale apparatus, system, and method for handling precisely aligned and centered semiconductor wafer pairs for wafer-to-wafer aligning and bonding applications includes an end effector having a frame member and a floating carrier connected to the frame member with a gap formed therebetween, wherein the floating carrier has a semi-circular interior perimeter. The centered semiconductor wafer pairs are positionable within a processing system using the end effector under robotic control. The centered semiconductor wafer pairs are bonded together without the presence of the end effector in the bonding device.