A method for forming a semiconductor structure includes receiving a first die having a first interconnect structure and a first bonding layer over the first interconnect structure, and a second die having a second interconnect structure and a second bonding layer over the second interconnect structure; forming a recess indenting into the first bonding layer; and forming a positioning member on the second bonding layer. The method further includes bonding the second die over the first die; and disposing the positioning member into the recess. The positioning member includes dielectric, is surrounded by the first bonding layer, and is isolated from the first interconnect structure and the second interconnect structure.

A method includes forming a first substrate including a first dielectric layer and a first metal pad, forming a second substrate including a second dielectric layer and a second metal pad, and bonding the first dielectric layer to the second dielectric layer, and the first metal pad to the second metal pad. One or both of the first and second substrates is formed by forming a first insulating layer, forming an opening in the layer, forming a barrier on an inner surface of the opening, forming a metal pad material on the barrier, polishing the metal pad material to expose a portion of the barrier and to form a gap, expanding the gap, forming a second insulating layer to fill the opening and the gap, and polishing the insulating layers such that a top surface of the metal pad is substantially planar with an upper surface of the polished layer.

Provided is a hybrid bonding apparatus including a plurality of chambers, and a transferer configured to transfer a plurality of wafers between the plurality of chambers and transfer a plurality of bonded wafers to an annealing chamber, the plurality of wafers including a plurality of substrate wafers and a plurality of die supply wafers, wherein the plurality of chambers respectively includes a wafer supplier configured to store the plurality of wafers, a bonding device configured to bond the plurality of wafers, the bonding device including a bonder configured to bond dies on the plurality of substrate wafers from the plurality of die supply wafers, and a pre-annealing oven configured to primarily anneal the plurality of substrate wafers, and a processor.

A structure includes a first die and a second die. The first die includes a first bonding layer having a first plurality of bond pads disposed therein and a first seal ring disposed in the first bonding layer. The first bonding layer extends over the first seal ring. The second die includes a second bonding layer having a second plurality of bond pads disposed therein. The first plurality of bond pads is bonded to the second plurality of bond pads. The first bonding layer is bonded to the second bonding layer. An area interposed between the first seal ring and the second bonding layer is free of bond pads.

The present disclosure relates to a method for forming a semiconductor device structure. The method includes forming a first semiconductor die and forming a second semiconductor die. The first semiconductor die includes a first metal layer, a first conductive via over the first metal layer, and a first conductive polymer liner surrounding the first conductive via. The second semiconductor die includes a second metal layer, a second conductive via over the second metal layer, and a second conductive polymer liner surrounding the second conductive via. The method also includes forming a conductive structure electrically connecting the first metal layer and the second metal layer by bonding the second semiconductor die to the first semiconductor die. The conductive structure is formed by the first conductive via, the first conductive polymer liner, the second conductive via, and the second conductive polymer liner.

The present application provides a method for fabricating a semiconductor device including providing a first semiconductor die including a first substrate including a first substrate including a first region and a second region, a plurality of first through substrate vias in the first region, a first circuit layer on the first substrate, and a control circuit on the first region and in the first circuit layer; forming a plurality of through die vias vertically along the first circuit layer and the second region; providing a second semiconductor die including a plurality of second conductive pads substantially coplanar with a top surface of the second semiconductor die; providing a third semiconductor die including a plurality of third conductive pads substantially coplanar with a top surface of the third semiconductor die; flipping the second semiconductor die and bonding the second semiconductor die onto the first circuit layer.

An integrated circuit device may be formed including an electronic substrate and a metallization structure on the electronic substrate, wherein the metallization structure includes a first level comprising a first dielectric material layer, a second level on the first level, wherein the second level comprises a second dielectric material layer, a third level on the second level, wherein the third level comprises a third dielectric material layer, at least one power/ground structure in the second level, and at least one skip level via extending at least partially through the first dielectric material layer of the first level, through the second dielectric layer of the second level, and at least partially through the third dielectric material layer of the third level, wherein the at least one skip level via comprises a continuous conductive material.

According to one embodiment, a semiconductor device includes a first substrate; a first insulating film provided on the first substrate; a first plug provided in the first insulating film; a second substrate provided on the first insulating film; and a first wiring including a first portion and a second portion. The first portion is provided in the second substrate and coupled to the first plug, and the second portion is provided on the second substrate and coupled to a bonding pad.

A semiconductor device includes a first substrate, a first insulating film provided on the first substrate, and a first plug provided in the first insulating film. The device further includes a first layer provided on the first insulating film and a first metal layer provided on the first plug in the first layer and electrically connected to the first plug. The device further includes a second metal layer including a first portion provided in the first layer and a second portion provided on the first layer and electrically connected to the first metal layer.

Layer structures for making direct metal-to-metal bonds at low temperatures and shorter annealing durations in microelectronics are provided. Example bonding interface structures enable direct metal-to-metal bonding of interconnects at low annealing temperatures of 150° C. or below, and at a lower energy budget. The example structures provide a precise metal recess distance for conductive pads and vias being bonded that can be achieved in high volume manufacturing. The example structures provide a vertical stack of conductive layers under the bonding interface, with geometries and thermal expansion features designed to vertically expand the stack at lower temperatures over the precise recess distance to make the direct metal-to-metal bonds. Further enhancements, such as surface nanotexture and copper crystal plane selection, can further actuate the direct metal-to-metal bonding at lowered annealing temperatures and shorter annealing durations.