The present invention provides a method for manufacturing an electronic device including a base material that has an exposed metal portion on a surface of the base material and an electronic component that is provided on the base material. The method includes a flux treatment step of treating the exposed metal portion with a flux by bringing the exposed metal portion into contact with the flux and an introduction step of introducing a resin composition such that the resin composition comes into contact with a surface of the exposed metal portion treated with the flux. The flux contains a rosin, an activator, and a solvent. The content of the rosin is equal to or greater than 1 part by mass and equal to or smaller than 18 parts by mass with respect to 100 parts by mass of the flux. The percent change in mass of the flux before and after a heating treatment is equal to or lower than 21% by mass. The resin composition contains an epoxy resin and a phenolic resin curing agent. In a case where SP1 represents a Hansen's method-based average solubility parameter of a resin group consisting of the epoxy resin and the phenolic resin curing agent in the resin composition, and Mn1 represents a number average molecular weight of the resin group, SP1 and Mn1 satisfy Mn1≤210×SP1−4,095.

A first metal layer can be deposited over first dielectric material layers of a first substrate, and can be patterned into first metallic plates. First bonding pads including a respective one of the first metallic plates are formed. A first polymer material layer can be formed over the first bonding pads. A second semiconductor die including second bonding pads is bonded to the first bonding pads to form a bonded assembly.

An optoelectronic device includes an optical integrated circuit having a first surface and a second surface opposite the first surface. The optical integrated circuit has an optical zone of the first surface of the optical integrated circuit. The device includes an electrically insulating material disposed over the optical integrated circuit, where he electrically insulating material partially covers the first surface so as to expose the optical zone.

Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process:
Q≤|∫.sub.T1.sup.T2A(T)dT−∫.sub.T1.sup.T3E(T)dT|<0.01, wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

In an embodiment, a device includes: a first reflective structure including first doped layers of a semiconductive material, alternating ones of the first doped layers being doped with a p-type dopant; a second reflective structure including second doped layers of the semiconductive material, alternating ones of the second doped layers being doped with a n-type dopant; an emitting semiconductor region disposed between the first reflective structure and the second reflective structure; a contact pad on the second reflective structure, a work function of the contact pad being less than a work function of the second reflective structure; a bonding layer on the contact pad, a work function of the bonding layer being greater than the work function of the second reflective structure; and a conductive connector on the bonding layer.

The present disclosure relates to a Gallium-Nitride (GaN) based module, which includes a module substrate, a thinned switch die residing over the module substrate, a first mold compound, and a second mold compound. The thinned switch die includes an electrode region, a number of switch interconnects extending from a bottom surface of the electrode region to the module substrate, an aluminium gallium nitride (AlGaN) barrier layer over a top surface of the electrode region, a GaN buffer layer over the AlGaN barrier layer, and a lateral two-dimensional electron gas (2DEG) layer realized at a heterojunction of the AlGaN barrier layer and the GaN buffer layer. The first mold compound resides over the module substrate, surrounds the thinned switch die, and extends above a top surface of the thinned switch die to form an opening over the top surface of the thinned switch die. The second mold compound fills the opening.

A method for producing an illumination device may include providing a plurality of optoelectronic semi-conductor components that each have a semi-conductor layer sequence for generating radiation where the semiconductor components each have at least one contact surface on one side and are held by a common carrier. The method may further include electroplating each contact surface of the semi-conductor components using a solder material, applying the semi-conductor components having the solder material to a substrate, and melting and soldering the contact surfaces onto the surfaces.

A method of manufacturing a three-dimensional semiconductor device includes forming a bi-layer sacrificial stack on a top wafer and a bottom wafer each including a series of interconnects in a dielectric substrate. The bi-layer sacrificial stack includes a second sacrificial layer on a first sacrificial layer. The method also includes selectively etching the second sacrificial layers to form a first pattern of projections on the top wafer and a second pattern of projections on the bottom wafer. The first pattern of projections is configured to mesh with the second pattern of projections. The method also includes positioning the top wafer on the bottom wafer and releasing the top wafer such that engagement between the first pattern of projections and the second pattern of projections self-aligns the plurality of interconnects of the top wafer with the plurality of interconnects of the bottom wafer within a misalignment error.

An electronic device and a method of making an electronic device. As non-limiting examples, various aspects of this disclosure provide methods of making an electronic device, and electronic devices made thereby, that comprise forming first and second encapsulating materials, followed by further processing and the removal of the entire second encapsulating material.

The present invention provides a method for manufacturing an electronic device including a base material that has an exposed metal portion on a surface of the base material and an electronic component that is provided on the base material. The method includes a flux treatment step of treating the exposed metal portion with a flux by bringing the exposed metal portion into contact with the flux and an introduction step of introducing a resin composition such that the resin composition comes into contact with a surface of the exposed metal portion treated with the flux. The flux contains a rosin, an activator, and a solvent. The content of the rosin is equal to or greater than 1 part by mass and equal to or smaller than 18 parts by mass with respect to 100 parts by mass of the flux. The percent change in mass of the flux before and after a heating treatment is equal to or lower than 21% by mass. The resin composition contains an epoxy resin and a phenolic resin curing agent. In a case where SP1 represents a Hansen's method-based average solubility parameter of a resin group consisting of the epoxy resin and the phenolic resin curing agent in the resin composition, and Mn1 represents a number average molecular weight of the resin group, SP1 and Mn1 satisfy Mn1≤210×SP1−4,095.