Presented herein is a WLCSP intermediate structure and method forming the same, the method comprising forming a first redistribution layer (RDL) on a carrier, the first RDL having mounting pads disposed on the first RDL, and mounting interposer dies on a second side of the first RDL. A second RDL is formed over a second side of the interposer dies, the second RDL having a first side adjacent to the interposer dies, one or more lands disposed on the second RDL, at least one of the one or more lands in electrical contact with at least one of the interposer dies or at least one of the mounting pads. A molding compound is formed around the interposer dies and over a portion of the first RDL prior to the forming the second RDL and the second RDL is formed over at least a portion of the molding compound.

A semiconductor device includes a substrate, an interconnect structure, and conductive vias. The substrate has a first side, a second side and a sidewall connecting the first side and the second side, wherein the sidewall includes a first planar sidewall of a first portion of the substrate, a second planar sidewall of a second portion of the substrate and a curved sidewall of a third portion of the substrate, where the first planar sidewall is connected to the second planar sidewall through the curved sidewall. The interconnect structure is located on the first side of the substrate, where a sidewall of the interconnect structure is offset from the second planar sidewall. The conductive vias are located on the interconnect structure, where the interconnect structure is located between the conductive vias and the substrate.

A semiconductor structure includes a first redistribution structure, a first local interconnect component disposed on the first redistribution structure, and a first interconnect structure over a second side of the first local interconnect component. The first local interconnect component includes a first plurality of redistribution layers. The first plurality of redistribution layers includes a first plurality of conductive features on a first side of the first local interconnect component. Each of the first plurality of conductive features are coupled to respective conductive features of the first redistribution structure. The first interconnect structure includes a second plurality of conductive features and a third plurality of conductive features. The second plurality of conductive features are electrically coupled to the third plurality of conductive features through the first local interconnect component.

Provided are a package structure and a method of forming the same. The package structure includes a first tier, a second tier, and a third tier. The first tier includes an interposer. The second tier is disposed on the first tier and includes a bottom die. The third tier is disposed on the second tier and includes a plurality of first dies and at least one second die. The at least one second die is disposed between the plurality of first dies. The plurality of first dies are electrically connected to the bottom die by a plurality of first connectors to form a signal path, the plurality of first dies are electrically connected to the interposer by a plurality of second connectors to form a power path, and the plurality of first connectors are closer to the at least one second die than the plurality of second connectors.

A semiconductor package includes a die, a redistribution structure and a plurality of conductive terminals. The redistribution structure is disposed below and electrically connected to the die. The redistribution structure includes a plurality of conductive patterns, and at least one of the plurality of conductive patterns has a cross-section substantially parallel to the surface of the die. The cross-section has a long-axis and a short-axis, and the long-axis intersects with a center axis of the die. The conductive terminals are disposed below and electrically connected to the redistribution structure.

A multi-chip device includes a first material within a substrate. The first material has a first coefficient of thermal expansion different than a second coefficient of thermal expansion of the substrate. A first chip overlies a first portion of the first material and a first portion of the substrate. A second chip overlies a second portion of the first material and a second portion of the substrate. The first material is between the first portion of the substrate and the second portion of the substrate.

A package structure is provided. The package structure includes a first package component and a second package component. The second package component includes a substrate and an electronic component disposed on the substrate, and the first package component is mounted to the substrate. The package structure further includes a ring structure disposed on the second package component and around the first package component. The ring structure has a first foot and a second foot, the first foot and the second foot extend toward the substrate, the electronic component is covered by the ring structure and located between the first foot and the second foot, and the first package component is exposed from the ring structure.

A package structure and a formation method of a package structure are provided. The method includes disposing a chip structure over a substrate. The chip structure has an inclined sidewall, the inclined sidewall is at an acute angle to a vertical, the vertical is a direction perpendicular to a main surface of the chip structure, and the acute angle is in a range from about 12 degrees to about 45 degrees. The method also includes forming a protective layer to surround the chip structure.

A semiconductor package includes a redistribution substrate having first and second surfaces, a first semiconductor chip on the first surface, external terminals on the second surface, a second semiconductor chip above the first semiconductor chip, external connection members below the second semiconductor chip, conductive pillars electrically connecting the external connection members to the redistribution substrate. The second semiconductor chip includes a device layer, a wiring layer, and a redistribution layer on a semiconductor substrate. The wiring layer includes intermetallic dielectric layers, wiring lines, and a conductive pad connected to an uppermost wiring line. The redistribution layer includes a first redistribution dielectric layer, a first redistribution pattern, and a second redistribution dielectric layer. A vertical distance between the semiconductor substrate and the conductive pillars is less than that between the first semiconductor chip and the external terminals.

A semiconductor package includes a semiconductor chip, a lower redistribution layer disposed under the semiconductor chip, the lower redistribution layer including a plurality of lower insulating layers, a plurality of lower redistribution patterns, and a plurality of lower conductive vias, a lower passivation layer disposed under the lower redistribution layer and provided with a recess at a bottom surface of the lower passivation layer, an under bump metallization (UBM) pad disposed in the first recess, a UBM protective layer disposed in the first recess and connected to the lower conductive vias while covering a top surface and opposite side surfaces of the UBM pad, and an outer connecting terminal connected to a bottom surface of the UBM pad. The bottom surface of the UBM pad is positioned at a first depth from the bottom surface of the lower passivation layer.