A method and apparatus for performing metal-to-metal bonding for an electrical device and an electrical device produced thereby. For example and without limitation, various aspects of this disclosure provide a process that comprises depositing a thin metal layer on a copper pillar and then mating the copper pillar with another copper element. Atoms of the thin metal layer may, for example, form a substitutional solid solution or intermetallic compounds with copper. A concentration gradient is introduced by the thin metal layer, and diffusion at the Cu-Cu interface begins immediately. The thin metal film and the copper may, for example, diffuse until the interface disappears or substantially disappears.

In an embodiment, an interconnection structure includes a first semiconductor device including a conductive stud, a second device including a contact pad, an adhesive layer including an organic component arranged between a distal end of the conductive stud and the contact pad, the adhesive layer coupling the conductive stud to the contact pad, and a conductive layer extending from the conductive stud to the contact pad. The conductive layer has a melting point of at least 600 C.

An electronic component mounting method including the steps of: providing a first electronic component having a principal surface provided with a plurality of bumps; providing a substrate having a placement area provided with a plurality of first electrodes corresponding to the plurality of bumps; applying flux to the plurality of bumps; applying flux to at least one of the first electrodes adjacent to at least one reinforcement position set on a peripheral portion of the placement area; dispensing a thermosetting resin onto the reinforcement position, and at least partially coating the first electrode adjacent to the reinforcement position, with the thermosetting resin; placing the first electronic component on the substrate such that the bumps land on the corresponding first electrodes, and thus bringing the thermosetting resin into contact with a peripheral edge portion of the first electronic component; and heating the substrate with the first electronic component placed thereon.

A method of bonding a semiconductor element to a substrate is provided. The method includes the steps of: (a) providing the semiconductor element at a position separated from the substrate, the semiconductor element including a plurality of conductive structures, each of the conductive structures including a contact portion; (b) heating the semiconductor element at the position such that the contact portions are in a molten state; and (c) bonding the semiconductor element to the substrate such that each of the contact portions is bonded to a corresponding conductive structure of the substrate.

An electronic chip including a support and connection pillars, each connection pillar including a trunk including an end portion and an intermediate portion coupling the end portion to the support, and including a collar at the junction between the end portion and the intermediate portion.

A chip packaging method using a hydrophobic surface includes forming superhydrophobic surfaces forming hydrophilic surfaces on predetermined positions of the superhydrophobic surfaces formed on the one of a first chip or the first board and the one of a second chip or a second board, respectively, generating liquid metal balls on the hydrophilic surfaces formed on the one of the first chip or the first board and the one of the second chip or the second board, respectively, and packaging the one of the first chip or the first board and the one of the second chip or the second board by combing the liquid metal ball of the one of the first chip or the first board and the liquid metal ball of the one of the second chip or the second board with each other.

A semiconductor device includes an electronic component and a board that are disposed opposite to each other in a first direction, and a solder that connects the electronic component and the board, in which the electronic component includes a first electrode on a surface facing the board, the board includes a second electrode on a surface facing the electronic component, the solder has a bonding portion that is an intermetallic compound at an interface with each of the electronic component and the board, the solder contains Sn as a main component, and a variation in thickness of the bonding portion in the first direction is less than 2 micrometers.