A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

Discussed is a device for self-assembling semiconductor light-emitting diodes for placing the semiconductor light-emitting diodes at predetermined positions on a substrate by using an electric field and a magnetic field, the substrate being accommodated in an assembly chamber accommodating a fluid, the device including a substrate chuck configured to dispose the substrate at an assembly position, wherein the substrate chuck includes a substrate support part configured to support the substrate on which an assembly electrode is formed, a rotating part configured to support the substrate support part, and a controller configured to control driving of the substrate chuck, wherein the substrate support part includes micro-holes for injecting a gas between the fluid and the substrate, and wherein the controller controls whether the gas is injected through the micro-holes according to whether the substrate is raised or lowered.

Discussed is a device for self-assembling semiconductor light-emitting diodes includes a substrate chuck that is provided in an assembly chamber and supports a substrate and disposes the substrate at an assembly position, wherein the substrate chuck sucks or injects a gas present between the substrate and a fluid during loading and unloading of the substrate.

A semiconductor package structure includes a first package including a bonding region and a periphery region surrounding the bonding region, at least one insulating structure disposed in the bonding region of the first package, a second package disposed over the first package and the insulating structure in the bonding region, and a plurality of connectors disposed between the first package and the second package. The plurality of connectors provide electrical connection between the first package and the second package. Further, the insulating structure penetrates the first package and is spaced apart from the plurality of connectors.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

Various aspects of this disclosure provide a method of manufacturing an electronic device and an electronic device manufactured thereby. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing an electronic device, and an electronic device manufactured thereby, that utilizes ink to form an intermetallic bond between respective conductive interconnection structures of a semiconductor die and a substrate.

An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.