A method for producing a semiconductor chip is a method for producing a semiconductor chip that includes a substrate, a conductive portion formed on the substrate, and a microbump formed on the conductive portion, which includes a smooth surface formation process of forming a smooth surface on the microbump, and the smooth surface formation process includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump and among principal surfaces of the pressure application member, a principal surface that contacts the microbump is a flat surface.

Discussed is a device for self-assembling semiconductor light-emitting diodes for placing the semiconductor light-emitting diodes at predetermined positions on a substrate by using an electric field and a magnetic field, the substrate being accommodated in an assembly chamber accommodating a fluid, the device including a substrate chuck configured to dispose the substrate at an assembly position, wherein the substrate chuck includes a substrate support part configured to support the substrate on which an assembly electrode is formed, a rotating part configured to support the substrate support part, and a controller configured to control driving of the substrate chuck, wherein the substrate support part includes micro-holes for injecting a gas between the fluid and the substrate, and wherein the controller controls whether the gas is injected through the micro-holes according to whether the substrate is raised or lowered.

A rework process includes attaching a first bond head to a first semiconductor package. The contact pads of the first semiconductor package are bonded to contact pads of a second semiconductor package by solder joints. The rework process further includes performing a first local heating process to melt the solder joints, removing the first semiconductor package using the first bond head, and removing at least a portion of solder from the contact pads of the second semiconductor package.

A jig for bonding a semiconductor chip may include a pressurizing portion and at least one opening. The pressuring portion may be configured to pressurize an upper surface of the semiconductor chip bonded to a package substrate via a bump and a flux using a laser. The opening may be surrounded by the pressurizing portion. The laser irradiated to the bump and the flux may be transmitted through the opening. A vapor generated from the flux by the laser may be discharged through the opening. Thus, the contamination of the jig caused by the vapor may be prevented so that a transmissivity of the laser through the jig may be maintained.

A method for chip on wafer bonding is provided. The method includes the formation of a plurality of posts on at least one of a chip and a wafer, and a like plurality of contacts on the other of the chip and the wafer. After formation, a contact surface of each post is planarized, the respective planarized contact surface having a surface roughness height. A bonding material is then applied to at least one of the chip in a thickness no greater than the surface roughness height of the contact surface. The posts are then temporarily bonded to the contacts using the bonding material to stabilize a position of the chip relative to the wafer for permanent diffusion bonding of the chip to the wafer.

A method of manufacturing a semiconductor device includes forming an insulation layer on a support body, selectively forming openings through the insulation layer, forming a conductor pattern in the openings, and above selected portions of, the insulation layer, mounting a first semiconductor element on the insulation layer and electrically connecting the first semiconductor element to the conductor pattern, forming a resin over the first semiconductor element and the insulation layer, removing the support body after the resin is formed to expose a surface of a portion of the conductor pattern, etching the exposed surface of the portion of the conductor pattern to form a recess over the portion of the conductor pattern, and forming a pad containing a metal different than the metal of the conductor pattern in the recess in contact with the conductor pattern.

Various aspects of this disclosure provide a method of manufacturing an electronic device and an electronic device manufactured thereby. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing an electronic device, and an electronic device manufactured thereby, that utilizes ink to form an intermetallic bond between respective conductive interconnection structures of a semiconductor die and a substrate.

A method for producing a semiconductor chip is a method for producing a semiconductor chip that includes a substrate, a conductive portion formed on the substrate, and a microbump formed on the conductive portion, which includes a smooth surface formation process of forming a smooth surface on the microbump, and the smooth surface formation process includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump and among principal surfaces of the pressure application member, a principal surface that contacts the microbump is a flat surface.

A method for producing a semiconductor package is a method for producing a semiconductor package in which a plurality of semiconductor chips, each of which includes a substrate, conductive portions formed on the substrate, and microbumps formed on the conductive portions, are laminated, which includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump.

The present invention relates to an apparatus and method for wafer oxide removal and reflow treatment. In particular, the present invention relates to an apparatus for wafer oxide removal and reflow treatment, comprising: a heating plate, a sample plate for supporting a wafer sample above the heating plate, and an electron attachment pin plate above the sample plate, wherein the heating plate is configured to be capable of moving up and down, and contacting and heating the sample plate.