The present disclosure discloses a semiconductor device structure with an air gap for reducing capacitive coupling and a method for forming the semiconductor device structure. The semiconductor device structure includes a first conductive pad over a first semiconductor substrate, and a first conductive structure over the first conductive pad. The semiconductor device structure also includes a second conductive structure over the first conductive structure, and a second conductive pad over the second conductive structure. The second conductive pad is electrically connected to the first conductive pad through the first and the second conductive structures. The semiconductor device structure further includes a second semiconductor substrate over the second conductive pad, a first passivation layer between the first and the second semiconductor substrates and covering the first conductive structure, and a second passivation layer between the first passivation layer and the second semiconductor substrate. The first and the second passivation layers surround the second conductive structure, and a first air gap is enclosed by the first and the second passivation layers.

A semiconductor device including: a semiconductor chip; a plurality of insulating substrates mounted with the semiconductor chip; a printed circuit board facing the plurality of insulating substrates; and a conductive member for electrically connecting the plurality of insulating substrates and the printed circuit board is provided. The printed circuit board has a first through part arranged between the plurality of insulating substrates being adjacent to each other in a top view, and a second through part different from the first through part in shape in the top view.

The present disclosure relates to a method of manufacturing a semiconductor device package. The method includes: (a) disposing a support structure on a first substrate; (b) electrically connecting a first electronic component on the first substrate, wherein a portion of the first electronic component is separated from the first substrate by the support structure; (c) heating the semiconductor device package; and (d) removing the support structure.

Systems and techniques that facilitate uniform qubit chip gaps via injection-molded solder pillars are provided. In various embodiments, a device can comprise one or more injection-molded solder interconnects. In various aspects, the one or more injection-molded solder interconnects can couple at least one qubit chip to an interposer chip. In various embodiments, the device can further comprise one or more injection-molded solder pillars. In various instances, the one or more injection-molded solder pillars can be between the at least one quit chip and the interposer chip. In various cases, the one or more injection-molded solder pillars can be in parallel with the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can facilitate and/or maintain a uniform gap between the at least one qubit chip and the interposer chip. In various embodiments, a melting point of the one or more injection-molded solder pillars can be higher than a melting point of the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can be superconductors. In various embodiments, a yield strength of the one or more injection-molded solder pillars can be between 3,000 pounds per square inch and 15,000 pounds per square inch, which can be higher than a yield strength of the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can be binary tin alloys, tertiary tin alloys, and/or quaternary tin alloys.

A bonding tool for bonding a semiconductor element to a substrate on a bonding machine is provided. The bonding tool includes a body portion including a contact region for contacting the semiconductor element during a bonding process on the bonding machine. The bonding tool also includes a standoff extending from the body portion, and configured to contact the substrate during at least a portion of the bonding process.

A method for manufacturing a display device is provided. The method includes providing an array module having at least one first alignment mark. The method also includes providing a light-emitting module having at least one second alignment mark. The method further includes aligning the light-emitting module and the array module by the at least one first alignment mark and the at least one second alignment mark. In addition, the method includes bonding the light-emitting module onto the array module.

A bonding tool for bonding a semiconductor element to a substrate on a bonding machine is provided. The bonding tool includes a body portion including a contact region for contacting the semiconductor element during a bonding process on the bonding machine. The bonding tool also includes a standoff extending from the body portion, and configured to contact the substrate during at least a portion of the bonding process.

A method of manufacturing a three-dimensional semiconductor device includes forming a bi-layer sacrificial stack on a top wafer and a bottom wafer each including a series of interconnects in a dielectric substrate. The bi-layer sacrificial stack includes a second sacrificial layer on a first sacrificial layer. The method also includes selectively etching the second sacrificial layers to form a first pattern of projections on the top wafer and a second pattern of projections on the bottom wafer. The first pattern of projections is configured to mesh with the second pattern of projections. The method also includes positioning the top wafer on the bottom wafer and releasing the top wafer such that engagement between the first pattern of projections and the second pattern of projections self-aligns the plurality of interconnects of the top wafer with the plurality of interconnects of the bottom wafer within a misalignment error.

A method for manufacturing a display device is provided. The method includes providing an array module having at least one first alignment mark. The method also includes providing a light-emitting module having at least one second alignment mark. The method further includes aligning the light-emitting module and the array module by the at least one first alignment mark and the at least one second alignment mark. In addition, the method includes bonding the light-emitting module onto the array module.

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. The lower portion has a width is wider than of the upper portion.