H01L2224/81395

Bonding structure for semiconductor package and method of manufacturing the same

A method of manufacturing a bonding structure includes (a) providing a substrate, wherein the substrate includes a top surface and at least one bonding pad disposed adjacent to the top surface of the substrate, at least one bonding pad having a sloped surface with a first slope; (b) providing a semiconductor element, wherein the semiconductor element includes at least one pillar, and at least one pillar has a sidewall with a second slope, wherein the absolute value of the first slope is smaller than the absolute value of the second slope; and (c) bonding at least one pillar to a portion of the sloped surface of corresponding ones of the at least one bonding pad.

Connection body
09960138 · 2018-05-01 · ·

Even in case of conductive particles being clamped between stepped sections of substrate electrodes and electrode terminals, conductive particles sandwiched between each main surface of the substrate electrodes and electrode terminals are sufficiently compressed, ensuring electrical conduction. An electronic component is connected to a circuit substrate via an anisotropic conductive adhesive agent, on respective edge-side areas of substrate electrodes of the circuit substrate and electrode terminals of the electronic component, stepped sections are formed and abutted, conductive particles are sandwiched between each main surface and stepped sections of the substrate electrodes and electrode terminals; the conductive particles and stepped sections satisfy formula, a+b+c0.8 D (1), wherein a is height of the stepped section of the electrode terminals, b is height of the stepped section of the substrate electrodes, c is gap distance between each stepped sections and D is diameter of conductive particles.

FULLY MOLDED MINIATURIZED SEMICONDUCTOR MODULE
20180108606 · 2018-04-19 ·

A semiconductor module can comprise a fully molded base portion comprising a planar surface that further comprises a semiconductor die comprising contact pads, conductive pillars coupled to the contact pads and extending to the planar surface, and an encapsulant material disposed over the active surface, four side surfaces, and around the conductive pillars, wherein ends of the conductive pillars are exposed from the encapsulant material at the planar surface of the fully molded base portion. A build-up interconnect structure comprising a routing layer can be disposed over the fully molded base portion. A photo-imageable solder mask material can be disposed over the routing layer and comprise openings to form surface mount device (SMD) land pads electrically coupled to the semiconductor die and the conductive pillars. A SMD component can be electrically coupled to the SMD land pads with surface mount technology (SMT).

FULLY MOLDED MINIATURIZED SEMICONDUCTOR MODULE
20180108606 · 2018-04-19 ·

A semiconductor module can comprise a fully molded base portion comprising a planar surface that further comprises a semiconductor die comprising contact pads, conductive pillars coupled to the contact pads and extending to the planar surface, and an encapsulant material disposed over the active surface, four side surfaces, and around the conductive pillars, wherein ends of the conductive pillars are exposed from the encapsulant material at the planar surface of the fully molded base portion. A build-up interconnect structure comprising a routing layer can be disposed over the fully molded base portion. A photo-imageable solder mask material can be disposed over the routing layer and comprise openings to form surface mount device (SMD) land pads electrically coupled to the semiconductor die and the conductive pillars. A SMD component can be electrically coupled to the SMD land pads with surface mount technology (SMT).

Solder reflow apparatus and method of manufacturing an electronic device
12154882 · 2024-11-26 · ·

A solder reflow apparatus includes a vapor generating chamber configured to accommodate a heat transfer fluid and to accommodate saturated vapor generated by heating the heat transfer fluid; a heater configured to heat the heat transfer fluid accommodated in the vapor generating chamber; a substrate stage configured to be movable upward and downward within the vapor generating chamber, the substrate stage including a seating surface; vapor passages penetrating the substrate stage and configured to allow the vapor to move therethrough; and suction passages penetrating the substrate stage to be open to the seating surface and in which at least a partial vacuum is generated.

CHIP PACKAGE STRUCTURE WITH NICKEL LAYER
20240387192 · 2024-11-21 ·

A chip package structure is provided. The chip package structure includes a wiring substrate having a pad and a conductive adhesive layer over the pad and having a first inner wall, a second inner wall, a first sidewall, and a second sidewall. The first inner wall and the second inner wall face each other, and the first sidewall and the second sidewall are opposite to each other. The chip package structure also includes a nickel layer over the conductive adhesive layer, and the nickel layer covers the first inner wall, the second inner wall, the first sidewall, and the second sidewall of the conductive adhesive layer. The chip package structure further includes a chip over the wiring substrate and a conductive bump connected between the nickel layer and the chip.

Semiconductor package having a substrate structure with selective surface finishes
09935066 · 2018-04-03 · ·

The present disclosure relates to a semiconductor package having a substrate structure with selective surface finishes, and a process for making the same. The disclosed semiconductor package includes a substrate body, a first metal structure having a first finish area and a second finish area, a second metal structure having a third finish area, a surface finish, and a tuning wire. The first metal structure and the second metal structure are formed over the substrate body. The surface finish is provided over the first finish area of the first metal structure and at least a portion of the third finish area of the second metal structure. The surface finish is not provided over the second finish area of the first metal structure. The tuning wire is coupled between the first finish area and at least one portion of the third finish area.

High density package interconnects

Electronic assemblies and methods including the formation of interconnect structures are described. In one embodiment an apparatus includes semiconductor die and a first metal bump on the die, the first metal bump including a surface having a first part and a second part. The apparatus also includes a solder resistant coating covering the first part of the surface and leaving the second part of the surface uncovered. Other embodiments are described and claimed.

Printed wiring board and method for manufacturing printed wiring board
09917025 · 2018-03-13 · ·

A printed wiring board includes a first circuit board having a first surface and a second surface, and a second circuit board having a third surface and a fourth surface and having a mounting area on the third surface of the second circuit board. The first circuit board is laminated on the third surface of the second circuit board such that the first surface of the first circuit board is in contact with the third surface of the second circuit board, the first circuit board includes reinforcing material and has an opening portion exposing the mounting area of the second circuit board, and the first circuit board and the second circuit board are formed such that a ratio H1/h1 is in a range that is greater than 0.75 and smaller than 2.4, where H1 represents a thickness of the first circuit board and h1 represents a thickness of the second circuit board.

Printed wiring board and method for manufacturing printed wiring board
09917025 · 2018-03-13 · ·

A printed wiring board includes a first circuit board having a first surface and a second surface, and a second circuit board having a third surface and a fourth surface and having a mounting area on the third surface of the second circuit board. The first circuit board is laminated on the third surface of the second circuit board such that the first surface of the first circuit board is in contact with the third surface of the second circuit board, the first circuit board includes reinforcing material and has an opening portion exposing the mounting area of the second circuit board, and the first circuit board and the second circuit board are formed such that a ratio H1/h1 is in a range that is greater than 0.75 and smaller than 2.4, where H1 represents a thickness of the first circuit board and h1 represents a thickness of the second circuit board.