A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.

A method and device are provided wherein a first semiconductor device and a via are encapsulated with an encapsulant. A redistribution layer connects the first semiconductor device to a second semiconductor device. In a particular embodiment the first semiconductor device is an integrated voltage regulator and the second semiconductor device is a logic device such as a central processing unit.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 m.

An approach to provide an electronic assembly process that includes receiving at least one electronic assembly after a solder reflow process using a Sn-containing solder and a water-soluble flux. The approach includes baking the at least one electronic assembly in an oxygen containing environment and, then cleaning the at least one electronic assembly in an aqueous cleaning process.

An approach to provide an electronic assembly process that includes receiving at least one electronic assembly after a solder reflow process using a Sn-containing solder and a water-soluble flux. The approach includes baking the at least one electronic assembly in an oxygen containing environment and, then cleaning the at least one electronic assembly in an aqueous cleaning process.

An electronic apparatus includes a first electronic part with a first terminal, a second electronic part with a second terminal opposite the first terminal, and a joining portion which joins the first terminal and the second terminal. The joining portion contains a pole-like compound extending in a direction in which the first terminal and the second terminal are opposite to each other. The joining portion contains the pole-like compound, so the strength of the joining portion is improved. When the first terminal and the second terminal are joined, the temperature of one of the first electronic part and the second electronic part is made higher than that of the other. A joining material is cooled and solidified in this state. By doing so, the pole-like compound is formed.

A thermocompression bonding system for bonding semiconductor elements is provided. The thermocompression bonding system includes (1) a bond head assembly including a heater for heating an semiconductor element to be bonded, the bond head assembly including a fluid path configured to receive a cooling fluid; (2) a pressurized cooling fluid source; (3) a booster pump for receiving a pressurized cooling fluid from the pressurized cooling fluid source, and for increasing a pressure of the received pressurized cooling fluid; (4) a pressurized fluid reservoir for receiving pressurized cooling fluid from the booster pump; and (5) a control valve for controlling a supply of pressurized cooling fluid from the pressurized fluid reservoir to the fluid path.

An electronic apparatus includes a first electronic part with a first terminal, a second electronic part with a second terminal opposite the first terminal, and a joining portion which joins the first terminal and the second terminal. The joining portion contains a pole-like compound extending in a direction in which the first terminal and the second terminal are opposite to each other. The joining portion contains the pole-like compound, so the strength of the joining portion is improved. When the first terminal and the second terminal are joined, the temperature of one of the first electronic part and the second electronic part is made higher than that of the other. A joining material is cooled and solidified in this state. By doing so, the pole-like compound is formed.

Solder-bumped semiconductor substrates (e.g., semiconductor wafers) and methods for forming solder bumped semiconductor substrates are provided, in which solder bumps are formed on a semiconductor substrate using preformed solder balls having different compositions and/or sizes. Two or more solder balls masks are successively utilized to place different types of preformed solder balls (differing in composition and/or size) into corresponding cavities of a solder ball fixture, and thereby form an array of different types of preformed solder balls arranged in the solder ball fixture. The array of preformed solder balls in the solder ball fixture are then transferred to corresponding contact pads of a semiconductor substrate (e.g., semiconductor wafer) using a single solder reflow process. This process allows different types of preformed solder bumps to be bonded to a semiconductor substrate at the same time using a single solder reflow process.

A thermocompression bonding system for bonding semiconductor elements is provided. The thermocompression bonding system includes (1) a bond head assembly including a heater for heating an semiconductor element to be bonded, the bond head assembly including a fluid path configured to receive a cooling fluid; (2) a pressurized cooling fluid source; (3) a booster pump for receiving a pressurized cooling fluid from the pressurized cooling fluid source, and for increasing a pressure of the received pressurized cooling fluid; (4) a pressurized fluid reservoir for receiving pressurized cooling fluid from the booster pump; and (5) a control valve for controlling a supply of pressurized cooling fluid from the pressurized fluid reservoir to the fluid path.