A package structure and a method of manufacturing the same are provided. The package structure includes a die, a redistribution layer (RDL) structure, a through integrated fan-out via (TIV) and a conductive terminal. The RDL structure is disposed on and electrically connected to the die. The TIV is laterally aside the die and extends to contact a bottom surface and a sidewall of a redistribution layer of the RDL structure. The conductive terminal is electrically connected to the die through the RDL structure and the TIV.

A leadless packaged semiconductor device includes a metal substrate having at least a first through-hole aperture having a first outer ring and a plurality of cuts through the metal substrate to define spaced apart metal pads on at least two sides of the first through-hole aperture. A semiconductor die that has a back side metal (BSM) layer on its bottom side and a top side with circuitry coupled to bond pads is mounted top side up on the first outer ring. A metal die attach layer is directly between the BSM layer and walls of the metal substrate bounding the first through-hole aperture that provides a die attachment that fills a bottom portion of the first through-hole aperture. Bond wires are between metal pads and the bond pads. A mold compound is also provided including between adjacent ones of the metal pads.

The present disclosure provides fan-out LED packaging structures and methods. The fan-out LED packaging structure at least comprises: an LED wafer, a packaging layer, a first redistribution layer, an IC control chip module, and a second redistribution layer. The LED wafer and the IC control chip module use metal wires of the first and second redistribution layers and metal-plated holes of the packaging layer to lead out and to control the LED wafer and the IC control chip. The present disclosure also provides fan-out LED packaging methods. The methods adopt metal plating in place of wire bonding, and adopt PI dielectric layers and rewiring layers in place of a base substrate, thus effectively reducing the LED package size.

The present application discloses a display panel and a preparation method thereof. The display panel includes a base substrate provided with a circuit area and a light-emitting area; a driving circuit located in the circuit area of the base substrate; an organic insulating layer covering the light-emitting area of the base substrate; a light-emitting element embedded in the organic insulating layer, where an overlap area between the orthographic projection of the light-emitting element on the base substrate and the orthographic projection of the driving circuit on the base substrate is 0; and a first lapping electrode located on the side, facing away from the base substrate, of the light-emitting element, where the light-emitting element is electrically connected to the driving circuit through the first lapping electrode.

A package structure includes a redistribution layer (RDL) structure, a die, and an encapsulant. The die is attached to the RDL structure through an adhesive layer. The encapsulant is disposed on the RDL structure and laterally encapsulates the die and the adhesive layer. The encapsulant includes a protruding part extending into the RDL structure and having a bottom surface in contact with the RDL structure.

An embodiment package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, a conductive line electrically connecting a first conductive via to a second conductive via, the conductive line including a first segment over the first integrated circuit die and having a first width, and a second segment over the first integrated circuit die having a second width larger than the first width, the second segment extending over a first boundary between the first integrated circuit die and the encapsulant.

A power semiconductor module device includes: a plurality of semiconductor elements that are arranged at intervals and flush with each other on a plane; an insulating support that fixes the semiconductor elements; a first thick-film plating layer that is formed as a first-surface-side electrode that electrically connects the semiconductor elements to each other on at least one surface of a front surface side and a rear surface side. The first thick-film plating layer supports the semiconductor elements from at least one of an upper direction and a lower direction.

A camera assembly includes a photosensitive unit, including a photosensitive chip and an optical filter mounted on the photosensitive chip; functional components; and an encapsulation layer, embedded with the photosensitive unit and the functional components. The photosensitive chip and the functional components are exposed from a bottom surface of the encapsulation layer. A top surface of the encapsulation layer is higher than the photosensitive chip and functional components and exposes the optical filter. The photosensitive chip has soldering pads facing away from the bottom surface of the encapsulation layer. The functional components have soldering pads exposed from the bottom surface of the encapsulation layer. The camera assembly further includes a redistribution layer structure, disposed on the bottom surface of the encapsulation layer and electrically connecting to the soldering pads.

A semiconductor package includes a first chip, a first chip and a molding compound. The first chip has a first via protruding from the first chip. The second chip has a second via protruding from the second chip, wherein a thickness of the first chip is different from a thickness of the second chip. The molding compound encapsulates the first chip, the second chip, the first via and the second via, wherein surfaces of the first via, the second via and the molding compound are substantially coplanar.

A method includes forming a metal seed layer on a dielectric layer, and forming a patterned mask over the metal seed layer. An opening in the patterned mask is over a first portion of the dielectric layer, and the patterned mask overlaps a second portion of the dielectric layer. The method further includes plating a metal region in the opening, removing the patterned mask to expose portions of the metal seed layer, etching the exposed portions of the metal seed layer, performing a plasma treatment on a surface of the second portion of the dielectric layer, and performing an etching process on the surface of the second portion of the dielectric layer.