An electronic package is provided, including: an encapsulation layer embedded with a first electronic component and conductive pillars; a circuit structure disposed on one surface of the encapsulation layer; a second electronic component disposed on the circuit structure; an insulation layer formed on the other surface of the encapsulation layer; and a circuit portion disposed on the insulation layer. Since the first and second electronic components are disposed on two sides of the circuit structure, respectively, the electronic package has various functions and high performance. A method for fabricating the electronic package is also provided.

This disclosure relates to a new package concept that eliminates the need for epoxy or epoxy solder used in traditional clip/lead frame-based power packages. The disclosure overcomes this disadvantage in clip-based packages by depositing the interconnect structure directly to the bod pads. The formation of the interconnect done at lower temperature leads to lower stress induced onto the die. Another advantage of the present disclosure is that semiconductor dies packaged using a method according to the present disclosure will have smaller footprint as the pads are directly built up/deposited. Another advantage of the method according to the present disclosure is that it allows large scale, i.e., panel level processing. Such a panel may include multiple ICs, or transistor or any other semiconductor devices.

In an embodiment, a package structure including an electro-optical circuit board, a fanout package disposed over the electro-optical circuit board is provided. The electro-optical circuit board includes an optical waveguide. The fanout package includes a first optical input/output portion, a second optical input/output portion and a plurality of electrical input/output terminals electrically connected to the electro-optical circuit board. The first optical input/output portion is optically coupled to the second optical input/output portion through the optical waveguide of the electro-optical circuit board.

A semiconductor device includes a molded body and an interconnection layer. The molded body includes a semiconductor chip, at least one terminal body disposed around the semiconductor chip and a resin member provided between the semiconductor chip and the terminal body. The molded body has a first surface, a second surface opposite to the first surface and a side surface connected to the first and second surfaces. The interconnection layer is provided on the first surface of the molded body. The interconnection layer includes an interconnect electrically connecting the semiconductor chip and the terminal body. The terminal body has first and second contact surfaces. The first contact surface is exposed at the first or second surface of the molded body. The second contact surface is connected to the first contact surface and exposed at the side surface of the molded body.

A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

A wiring board includes a base substrate, a semiconductor element embedded in the substrate and having active and non-active surfaces such that the semiconductor has a terminal on the active surface, a first build-up layer including an insulating layer and first conductor pads such that the first conductor pads have exposed surfaces exposed from a surface of the insulating layer on the opposite side with respect to the substrate, and a second build-up layer including an insulating layer and second conductor pads such that the second conductor pads have exposed surfaces exposed from a surface of the insulating layer on the opposite side with respect to the substrate. The insulating layer in the first build-up includes resin material and reinforcing material, the insulating layer in the second build-up includes resin material and reinforcing material, and the first conductor pads is embedded in the insulating layer in the first build-up.

A device package and methods of forming are provided. The device package includes a logic die and a first passivation layer over the logic die. The device package also includes a memory die and a molding compound extending along sidewalls of the logic die and the memory die. The device package also includes a conductive via extending through the molding compound, and a first redistribution layer (RDL) structure over the molding compound. The molding compound extends between a top surface of the memory die and a bottom surface of the first RDL structure. A top surface of the first passivation layer contacts the bottom surface of the first RDL structure.

An arrangement, a method of manufacturing component carriers and a component carrier are provided. The arrangement includes a central carrier structure having a front side and a back side, a first layer stack having a first surface structure made of another material than the interior of the first layer stack and covered by a first release layer which is attached to the front side, and a second layer stack covered by a second release layer which is attached to the back side.

A stacked chip package structure includes a first chip, stud bumps, a second chip, pillar bumps, an encapsulant and conductive vias. The first stud bumps are respectively disposed on a plurality of first pads of the first chip, wherein each first stud bump includes a rough surface, and the rough surface of each first stud bump is rougher than a top surface of each first pad. The second chip is disposed on the first chip and exposes the first pads. The pillar bumps are respectively disposed on a plurality of second pads of the second chips. The encapsulant encapsulates the first chip and the second chip and exposes a top surface of each second stud bump. The first conductive vias penetrate the encapsulant and connect the first stud bumps. Each first conductive via covers the rough surface of each first stud bump.

A support structure for use in fan-out wafer level packaging is provided that includes, a silicon handler wafer having a first surface and a second surface opposite the first surface, a release layer is located above the first surface of the silicon handler wafer, and a layer selected from the group consisting of an adhesive layer and a redistribution layer is located on a surface of the release layer. After building-up a fan-out wafer level package on the support structure, infrared radiation is employed to remove (via laser ablation) the release layer, and thus remove the silicon handler wafer from the fan-out wafer level package.