An integrated circuit chip includes a front face having an electrical connection pad. An overmolded encapsulation block encapsulates the integrated circuit chip and includes a front layer at least partially covering a front face of the integrated circuit chip. A through-hole the encapsulation block is located above the electrical connection pad of the integrated circuit chip. A wall of the through-hole is covered with an inner metal layer that is joined to the front pad of the integrated circuit chip. A front metal layer covers a local zone of the front face of the front layer, with the front metal layer being joined to the inner metal layer to form an electrical connection. The inner metal layer and the front metal layer are attached or anchored to activated additive particles that are included in the material of the encapsulation block.

A substrate structure is disclosed. The substrate structure includes a carrier, a dielectric layer on the carrier, a patterned organic core layer in the dielectric layer, and a conductive via. The patterned organic core layer defines a passage extending in the dielectric layer towards the carrier. The conductive via extends through the passage towards the carrier without contacting the patterned organic core layer.

In some examples, a package comprises a platform and at least one pedestal positioned along at least a portion of a perimeter of the platform. The platform and the at least one pedestal form a cavity. The package also comprises a die positioned in the cavity and on the platform, with the die having an active circuit facing away from the platform. The package also comprises a conductive layer coupled to the die and to a conductive terminal. The conductive terminal is positioned above the at least one pedestal, and the die and the conductive terminal are positioned in different horizontal planes.

A method for making a semiconductor device includes forming rims on first and second dice. The rims extend laterally away from the first and second dice. The second die is stacked over the first die, and one or more vias are drilled through the rims after stacking. The semiconductor device includes redistribution layers extending over at least one of the respective first and second dice and the corresponding rims. The one or more vias extend through the corresponding rims, and the one or more vias are in communication with the first and second dice through the rims.

A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Disclosed herein is a package comprising a first die having a first redistribution layer (RDL) disposed on a first side of a first substrate and a second die having a second RDL disposed on a first side of a second substrate, with the first RDL bonded to the second RDL. A third die having a third RDL is disposed on a first side of a third substrate, the third die mounted over the second die, with the second die disposed between the first die and the third die. First vias extend through, and are electrically isolated from, the second substrate, with the first vias each contacting a conductive element in the first RDL or the second RDL. Second vias extend through, and are electrically isolated from, the third substrate, with the second vias each contacting a conductive element in the third RDL or one of the first vias.

Disclosed herein is a package comprising a first die having a first redistribution layer (RDL) disposed on a first side of a first substrate and a second die having a second RDL disposed on a first side of a second substrate, with the first RDL bonded to the second RDL. A third die having a third RDL is disposed on a first side of a third substrate, the third die mounted over the second die, with the second die disposed between the first die and the third die. First vias extend through, and are electrically isolated from, the second substrate, with the first vias each contacting a conductive element in the first RDL or the second RDL. Second vias extend through, and are electrically isolated from, the third substrate, with the second vias each contacting a conductive element in the third RDL or one of the first vias.

A method includes: providing a semiconductor die having a first main surface, a second main surface opposite the first main surface, and an edge between the first main surface and the second main surface; applying a temporary spacer to a first part of the first main surface of the semiconductor die, the first part being positioned inward from a peripheral part of the first main surface; after applying the temporary spacer, embedding the semiconductor die at least partly in an embedding material, the embedding material covering the edge and the peripheral part of the first main surface of the semiconductor die and contacting a sidewall of the temporary spacer; and after the embedding, removing the temporary spacer from the first main surface of the semiconductor die to expose the first part of the first main surface of the semiconductor die. A semiconductor device produced by the method is also provided.

Disclosed herein is a circuit board that includes a resin substrate including a substrate wiring layer, and an electronic component embedded in the resin substrate and having a plurality of external electrodes. The resin substrate includes a plurality of via holes that expose the external electrodes and a plurality of via conductors embedded in the via holes to electrically connect the substrate wiring layer to the external electrodes. At least some of the via holes are different in planar shape from each other.