A chip structure includes a first substrate, a second substrate, a conductive via, and a redistribution layer. The first substrate has a first inclined sidewall. The second substrate is located on a bottom surface of the first substrate, and has an upper portion and a lower portion. The lower portion extends from the upper portion. The upper portion is between the first substrate and the lower portion. The upper portion has a second inclined sidewall, and a slope of the first inclined sidewall is substantially equal to a slope of the second inclined sidewall. The conductive via is in the lower portion. The redistribution layer extends from a top surface of the first substrate to a top surface of the lower portion of the second substrate sequentially along the first inclined sidewall and the second inclined sidewall, and is electrically connected to the conductive via.

A semiconductor device includes: a first semiconductor die having opposing first and second main surfaces and an edge between the first and second main surfaces; a molding compound covering the edge and a peripheral part of the first main surface of the first semiconductor die, the molding compound including a resin and filler particles embedded within the resin; and a first opening in the molding compound which exposes a first part of the first main surface of the first semiconductor die from the molding compound, the first part being positioned inward from the peripheral part, wherein the first opening in the molding compound has a sidewall, wherein predominantly all of the filler particles disposed along the sidewall of the first opening are fully embedded within the resin and not exposed at all along the sidewall. A semiconductor structure including a semiconductor wafer or panel is also described.

A method of manufacturing a component carrier is presented. The method includes providing a base structure having a front side and a back side, the back side being at least partially covered by a metallic layer, removing material of the base structure from the front side to thereby form a cavity which is at least partially closed by the metallic layer, inserting a component in the cavity and placing the component on the metallic layer.

A semiconductor package includes a semiconductor die having a semiconductor device, and first and second contact pads arranged on opposite surfaces of the die. The semiconductor die is embedded in a dielectric layer. The semiconductor package also includes one or more first package contact pads and one or more second package contact pads arranged on a first major surface of the semiconductor package. The first contact pad of the die is coupled to the one or more first package contact pads, and the second contact pad of the die is coupled to the one or more second package contact pads. In operation, the semiconductor device causes a current path between the first contact pad and the second contact pad. The package contact pads are arranged on the first major surface of the semiconductor package to provide multiple non-parallel current paths.

A method for making a semiconductor device includes forming rims on first and second dice. The rims extend laterally away from the first and second dice. The second die is stacked over the first die, and one or more vias are drilled through the rims after stacking. The semiconductor device includes redistribution layers extending over at least one of the respective first and second dice and the corresponding rims. The one or more vias extend through the corresponding rims, and the one or more vias are in communication with the first and second dice through the rims.

A printed circuit board (PCB) including an embedded electronic component is provided. The printed circuit board includes a core having a cavity, an electronic component inserted into the cavity having a rough surface formed on surfaces of external electrodes provided on both lateral portions thereof, a low rough surface being formed in a portion of the rough surfaces, insulating layers laminated on upper and lower portions of the core and bonded to an outer circumferential surface of the electronic component insertedly positioned in the cavity, and an external circuit pattern provided on the insulating layers.

A semiconductor structure includes a first semiconductor device, a second semiconductor device, a connection device and a redistribution circuit structure. The first semiconductor device is bonded on the second semiconductor device. The connection device is bonded on the second semiconductor device and arranged aside of the first semiconductor device, wherein the connection device includes a first substrate and conductive vias penetrating through the first substrate and electrically connected to the second semiconductor device. The redistribution circuit structure is located over the second semiconductor device, wherein the first semiconductor device and the connection device are located between the redistribution circuit structure and the second semiconductor device. The redistribution circuit structure and the first semiconductor device are electrically connected to the second semiconductor device through the conductive vias of the connection device.

A semiconductor device package includes a circuit layer, an electronic component, an electronic component, a first passivation layer and a second passivation layer. The circuit layer has a first surface. The electronic component is disposed on the first surface of the circuit layer. The first passivation layer is disposed on the first surface of the circuit layer. The first passivation layer has a first surface facing away the circuit layer. The second passivation layer is disposed on the first surface of the first passivation layer. The second passivation layer has a second surface facing away the circuit layer. A uniformity of the first surface of the first passivation layer is greater than a uniformity of the second surface of the second passivation layer.

Disclosed in one example is an apparatus including a substrate, a sensor over the substrate including an active surface and a sensor bond pad, a molding layer over the substrate and covering sides of the sensor, the molding layer having a molding height relative to a top surface of the substrate that is greater than a height of the active surface of the sensor relative to the top surface of the substrate, and a lidding layer over the molding layer and over the active surface. The lidding layer and the molding layer form a space over the active surface of the sensor that defines a flow channel.

Methods for forming a semiconductor device structure are provided. The method includes bonding a first wafer and a second wafer, and a first transistor is formed in a front-side of the first semiconductor wafer. The method further includes thinning a front-side of the second wafer and forming a second transistor in the front-side of the second wafer.