A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

Semiconductor device packages may include a first semiconductor device over a substrate and a second semiconductor device over the first semiconductor device. An active surface of the second semiconductor device may face away from the substrate. Electrical interconnections may extend from bond pads of the second semiconductor device, along surfaces of the second semiconductor device, first semiconductor device, and substrate to pads of routing members of the substrate. The electrical interconnections may include conductors in contact with the bond pads and the routing members and a dielectric material interposed between the conductors and the first semiconductor device, the second semiconductor device and the substrate between the bond pads and the pad of the routing members. An encapsulant distinct from the dielectric material may cover the electrical interconnections, the first semiconductor device, the second semiconductor device, and an upper surface of the substrate. Methods of fabrication are also disclosed.

Semiconductor device packages may include a first semiconductor device over a substrate and a second semiconductor device over the first semiconductor device. An active surface of the second semiconductor device may face away from the substrate. Electrical interconnections may extend from bond pads of the second semiconductor device, along surfaces of the second semiconductor device, first semiconductor device, and substrate to pads of routing members of the substrate. The electrical interconnections may include conductors in contact with the bond pads and the routing members and a dielectric material interposed between the conductors and the first semiconductor device, the second semiconductor device and the substrate between the bond pads and the pad of the routing members. An encapsulant distinct from the dielectric material may cover the electrical interconnections, the first semiconductor device, the second semiconductor device, and an upper surface of the substrate. Methods of fabrication are also disclosed.

The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing an interconnection structure. The method also includes forming a first dielectric layer on the interconnection structure. The method further includes forming a sacrificial pattern on the first dielectric layer. The method also includes forming an RDL on the first dielectric layer and the sacrificial pattern. The method further includes removing the sacrificial pattern to form an air cavity within the RDL.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

The present disclosure provides a fan-out packaging structure and a method of fabricating the same. The fan-out packaging structure includes a redistribution layer, a passivation layer, a semiconductor chip, a first packaging layer, a groove, first metal bumps, second metal bumps, an adapter board, a stacked chip package, a passive element, and a filling layer. By means of the present disclosure, various chips performing different functions can be integrated into one packaging structure, thereby improving the integration level of the fan-out packaging structure. By means of the redistribution layer, the adapter board, and the first and second metal bumps, a three-dimensional vertically stacked packaging is achieved. As the result, in addition to improved integration level, the conduction paths in the packaging structure can be effectively shortened, thereby reducing power consumption, increasing the transmission speed, and increasing the data processing capacity.

Disclosed is a method for testing a semiconductor element. The method comprises forming at least one redistribution layer on a chip, utilizing the at least one redistribution layer to test an array of semiconductor elements on the chip, and removing the at least one redistribution layer from the chip, wherein the length of each semiconductor element is between 2-150 μm and the width of each semiconductor element is between 2-150 μm.

A semiconductor die package includes a semiconductor transistor die having a contact pad on an upper main face. The semiconductor die package also includes an electrical conductor disposed on the contact pad and fabricated by laser-assisted structuring of a metallic material, and an encapsulant covering the semiconductor die and at least a portion of the electrical conductor.