A multichip module comprises a carrier, a plurality of chips, an electrical insulating layer, and an electrical interconnect structure. The carrier includes a bottom wall and four side walls defining an internal cavity. The chips are positioned in the internal cavity, with each chip including a plurality of bond pads. The electrical insulating layer is formed from electrically insulating material and is positioned on an upper surface of the carrier and the chips. The electrical interconnect structure includes a plurality of interconnect traces, with each interconnect trace formed from electrically conductive material and electrically connected to a first bond pad on a first chip and a second bond pad on a second chip. Each interconnect trace includes a bridge having a segment that is spaced apart from, and positioned above, the electrical insulating layer.

An electronic device module includes: a core layer having an opening; an electronic device disposed in the opening, one or both of the core layer and the electronic device being at least partially covered by an adhesion promoter layer; and an encapsulant layer at least partially embedding the core layer and the electronic device.

An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two integrated circuits are bonded together. A first opening is formed through one of the substrates. A multi-layer dielectric film is formed along sidewalls and a bottom of the first opening. A second opening is formed extending from the first opening to pads in the integrated circuits. A dielectric liner is formed, and the opening is filled with a conductive material to form a conductive plug.

The semiconductor device includes first and second semiconductor elements. Each element has an obverse surface and a reverse surface, with a first electrode arranged on the reverse surface, and with a second electrode arranged on the obverse surface. The semiconductor device further includes: a first lead having an obverse surface and a reverse surface; an insulating layer covering the first lead, the first semiconductor element and the second semiconductor element; a first electrode connected to the second electrode of the first semiconductor element; and a second electrode connected to the first lead. The first semiconductor element and the first lead are bonded to each other with the reverse surface of the first semiconductor element facing the lead obverse surface. The second semiconductor element and the first lead are bonded to each other with the reverse surface of the second semiconductor element facing the lead reverse surface.

A semiconductor package, a redistribution structure and a method for forming the same are provided. The redistribution structure for coupling an encapsulated die is provided, the redistribution structure includes a conductive pattern disposed over and electrically coupled to the encapsulated die. The conductive pattern extends beyond an edge of the encapsulated die along a first extending direction which intersects a second extending direction of the edge of the encapsulated die by an angle in a top view, and an impurity concentration of sulfur in the conductive pattern is less than about 0.1 ppm.

A semiconductor package including a chip stack structure, a redistribution layer (RDL) structure and conductive plugs is provided. The chip stack structure includes stacked chips. Each of the chips includes a pad. The pads on the chips are located on the same side of the chip stack structure. The RDL structure is disposed on the first sidewall of the chip stack structure and adjacent to the pads. The conductive plugs penetrate through the RDL structure. The conductive plug is connected to the corresponding pad.

A memory device, a semiconductor device and their manufacturing methods are provided. The method may include: providing a first die and a plurality of second dies, the first die having a first pad, each of the plurality of second dies having a second pad, each of the second pads having a through hole; stacking the plurality of second dies on the first die with the second pads aligned with the first pad. In any two adjacent second dies, the through hole closer to the first die is not larger than the through hole farther away; forming a connecting hole passing through the through holes, exposing the first pad, and comprising a plurality of hole sections; and forming a conductive body in the connecting hole. This method simplifies the manufacturing process, reduces the cost thereof, and improves the production yield.

A semiconductor package includes a semiconductor die including a sensing component, an encapsulant laterally covering the semiconductor die, a through insulator via (TIV) and a dummy TIV penetrating through the encapsulant, a patterned dielectric layer disposed on the top surfaces of the encapsulant and the semiconductor die, a conductive pattern disposed on and inserted into the patterned dielectric layer to be in contact with the TIV and the semiconductor die, and a first dummy conductive pattern disposed on the patterned dielectric layer and connected to the dummy TIV. The top surface of the encapsulant is above and rougher than a top surface of the semiconductor die, and the sensing component is accessibly exposed by the patterned dielectric layer.

A semiconductor device includes a first semiconductor die, a second semiconductor die, a dielectric layer, a first redistribution layer and a second redistribution layer. The first semiconductor die includes a first bonding pad and a second bonding pad. The second semiconductor die includes a third bonding pad and a fourth bonding pad. The dielectric layer covers the first semiconductor die and the second semiconductor die, and defines a first opening exposing the first bonding pad and the second bonding pad and a second opening exposing the third bonding pad and the fourth bonding pad. The first redistribution layer is disposed on the dielectric layer, and electrically connects the first bonding pad and the third bonding pad. The second redistribution layer is disposed on the dielectric layer, and electrically connects the second bonding pad and the fourth bonding pad.

A heterogeneous semiconductor structure, including a first integrated circuit and a second integrated circuit, the second integrated circuit being a photonic integrated circuit. The heterogeneous semiconductor structure may be fabricated by bonding a multi-layer source die, in a flip-chip manner, to the first integrated circuit, removing the substrate of the source die, and fabricating one or more components on the source die, using etch and/or deposition processes, to form the second integrated circuit. The second integrated circuit may include components fabricated from cubic phase gallium nitride compounds, and configured to operate at wavelengths shorter than 450 nm.