H01L2224/82385

Welding method of demetallized ceramic substrate having surface capillary microgroove structure

The present invention discloses a welding method of a demetallized ceramic substrate having a surface capillary microgroove structure. The demetallized ceramic substrate includes a ceramic substrate main body and surface capillary microstructures. The surface capillary microstructures are arranged on two lateral sides of the ceramic substrate main body and the surface capillary microstructures specifically are capillary microgrooves. The welding method includes the following steps: fixing a chip to an upper surface of the demetallized ceramic substrate having the surface capillary microgroove structure, fixing the ceramic substrate with the chip to a printed circuit board having a bonding pad, and placing melted solder on the bonding pad, and driving the solder to ascend to an electrode of the chip from the bonding pad in a lower layer by means of a capillary force, thereby realizing an electrical connection between the chip and the printed circuit board.

Conductive vias in semiconductor packages and methods of forming same

An embodiment package includes a first integrated circuit die encapsulated in a first encapsulant; a first through via extending through the first encapsulant; and a conductive pad disposed in a dielectric layer over the first through via and the first encapsulant. The conductive pad comprises a first region electrically connected to the first through via and having an outer perimeter encircling an outer perimeter of the first through via in a top down view. The package further includes a first dielectric region extending through the first region of the conductive pad. A conductive material of the first region encircles the first dielectric region in the top down view.

Conductive Vias in Semiconductor Packages and Methods of Forming Same

An embodiment package includes a first integrated circuit die encapsulated in a first encapsulant; a first through via extending through the first encapsulant; and a conductive pad disposed in a dielectric layer over the first through via and the first encapsulant. The conductive pad comprises a first region electrically connected to the first through via and having an outer perimeter encircling an outer perimeter of the first through via in a top down view. The package further includes a first dielectric region extending through the first region of the conductive pad. A conductive material of the first region encircles the first dielectric region in the top down view.

CONDUCTIVE VIAS IN SEMICONDUCTOR PACKAGES AND METHODS OF FORMING SAME

An embodiment package includes a first integrated circuit die encapsulated in a first encapsulant; a first through via extending through the first encapsulant; and a conductive pad disposed in a dielectric layer over the first through via and the first encapsulant. The conductive pad comprises a first region electrically connected to the first through via and having an outer perimeter encircling an outer perimeter of the first through via in a top down view. The package further includes a first dielectric region extending through the first region of the conductive pad. A conductive material of the first region encircles the first dielectric region in the top down view.

IC device having patterned, non-conductive substrate
09646853 · 2017-05-09 · ·

A patterned, non-conductive substrate for an integrated circuit (IC) package has a die side configured to receive a die and a lead side opposite the die side. A pattern formed in the substrate defines openings (e.g., holes, steps, grooves, and/or cavities) that extend between the die side and the lead side of the substrate. In the IC package, the openings are filled with conductive material (e.g., solder) that supports electrical connections between bond pads on the die and leads formed from the conductive material. The substrate can be used to form a relatively inexpensive, quad flat no-lead (QFN) IC package without using a metal lead frame and without bond wires.

IC DEVICE HAVING PATTERNED, NON-CONDUCTIVE SUBSTRATE
20170110339 · 2017-04-20 ·

A patterned, non-conductive substrate for an integrated circuit (IC) package has a die side configured to receive a die and a lead side opposite the die side. A pattern formed in the substrate defines openings (e.g., holes, steps, grooves, and/or cavities) that extend between the die side and the lead side of the substrate. In the IC package, the openings are filled with conductive material (e.g., solder) that supports electrical connections between bond pads on the die and leads formed from the conductive material. The substrate can be used to form a relatively inexpensive, quad flat no-lead (QFN) IC package without using a metal lead frame and without bond wires.

Electronic component

An electronic component includes an electrically conductive carrier. The electrically conductive carrier includes a carrier surface and a semiconductor chip includes a chip surface. One or both of the carrier surface and the chip surface include a non-planar structure. The chip is attached to the carrier with the chip surface facing towards the carrier surface so that a gap is provided between the chip surface and the carrier surface due to the non-planar structure of one or both of the carrier surface and the first chip surface. The electronic component further includes a first galvanically deposited metallic layer situated in the gap.