Processes for automatic registration between a solid circuit die and electrically conductive interconnects, and articles or devices made by the same are provided. The solid circuit die is disposed on a substrate with contact pads aligned with channels on the substrate. Electrically conductive traces are formed by flowing a conductive liquid in the channels toward the contact pads to obtain the automatic registration.

Provided is a manufacturing process for electronic circuit components such as bare dies, and packaged integrated chips, among other configurations, to form electronic assemblies. The surface of the electronic circuit component carries electronic elements such as conductive traces and/or other configurations including contact pads. A method for forming an electronic assembly includes providing a tacky layer. Then an electronic circuit component is provided having a first side and a second side, where the first side carries the electronic elements. The first side of the electronic circuit component is positioned into contact with the tacky layer. A bonding material is then deposited to a portion of the adhesive layer that is not covered by the first side of the electronic circuit component, to a depth which is sufficient to cover at least a portion of the electronic circuit component. The bonding material is then fixed or cured into a fixed or cured bonding material, and the tacky layer is removed. By these operations, the electronic circuit component is held in a secure attachment by the fixed or cured bonding material, and circuit connections may be made.

A fan-out semiconductor package includes: a core member including a plurality of insulating layers and a plurality of wiring layers and having a blind cavity penetrating through a portion of the plurality of insulating layers; a semiconductor chip disposed in the blind cavity; an encapsulant encapsulating at least portions of the core member and an active surface of the semiconductor chip and filling at least portions of the blind cavity; and a connection member disposed on the core member and an active surface of the semiconductor chip and including a redistribution layer connected to the connection pads. The plurality of wiring layers include antenna patterns and ground patterns, the antenna patterns and the ground patterns are disposed on different levels, and the antenna patterns are connected to the connection pads through the redistribution layer.

Provided is a manufacturing process for electronic circuit components such as bare dies, and packaged integrated chips, among other configurations, to form electronic assemblies. The surface of the electronic circuit component carries electronic elements such as conductive traces and/or other configurations including contact pads. A method for forming an electronic assembly includes providing a tacky layer. Then an electronic circuit component is provided having a first side and a second side, where the first side carries the electronic elements. The first side of the electronic circuit component is positioned into contact with the tacky layer. A bonding material is then deposited to a portion of the adhesive layer that is not covered by the first side of the electronic circuit component, to a depth which is sufficient to cover at least a portion of the electronic circuit component. The bonding material is then fixed or cured into a fixed or cured bonding material, and the tacky layer is removed. By these operations, the electronic circuit component is held in a secure attachment by the fixed or cured bonding material, and circuit connections may be made.

In a particular aspect, a device includes a substrate including at least one through-substrate via. A metal structure is disposed on a surface of the substrate. The device further includes a semiconductor layer bonded to the substrate. The semiconductor layer includes at least one complimentary metal-oxide-semiconductor (CMOS) transistor and a metal disposed within a second via. The metal is in direct contact with the metal structure.

In a particular aspect, a device includes a substrate including at least one through-substrate via. A metal structure is disposed on a surface of the substrate. The device further includes a semiconductor layer bonded to the substrate. The semiconductor layer includes at least one complimentary metal-oxide-semiconductor (CMOS) transistor and a metal disposed within a second via. The metal is in direct contact with the metal structure.

Electronic module, which comprises a first substrate, a first dielectric layer on the first substrate, at least one electronic chip, which is mounted with a first main surface directly or indirectly on partial region of the first dielectric layer, a second substrate over a second main surface of the at least one electronic chip, and an electrical contacting for the electric contact of the at least one electronic chip through the first dielectric layer, wherein the first adhesion layer on the first substrate extends over an area, which exceeds the first main surface.

Electronic module (100), which comprises a first substrate (102), a first dielectric layer (104) on the first substrate (102), at least one electronic chip (106), which is mounted with a first main surface (108) directly or indirectly on partial region of the first dielectric layer (104), a second substrate (110) over a second main surface (114) of the at least one electronic chip (106), and an electrical contacting (116) for the electric contact of the at least one electronic chip (106) through the first dielectric layer (104), wherein the first adhesion layer (104) on the first substrate (102) extends over an area, which exceeds the first main surface (108).

In a particular aspect, a device includes a substrate including at least one through-substrate via. A metal structure is disposed on a surface of the substrate. The device further includes a semiconductor layer bonded to the substrate. The semiconductor layer includes at least one complimentary metal-oxide-semiconductor (CMOS) transistor and a metal disposed within a second via. The metal is in direct contact with the metal structure.

In a particular aspect, a device includes a substrate including at least one through-substrate via. A metal structure is disposed on a surface of the substrate. The device further includes a semiconductor layer bonded to the substrate. The semiconductor layer includes at least one complimentary metal-oxide-semiconductor (CMOS) transistor and a metal disposed within a second via. The metal is in direct contact with the metal structure.