A method for replacing an element of a display device includes: forming a structure with a first liquid layer between a first micro device and a conductive pad of a substrate in which the first micro device is gripped by a capillary force produced by the first liquid layer; evaporating the first liquid layer such that the first micro device is bound to the substrate; determining if the first micro device is malfunctioned or misplaced; removing the first micro device when the first micro device is malfunctioned or misplaced; forming an another structure with a second liquid layer between a second micro device and the conductive pad of the substrate in which the second micro device is gripped by a capillary force produced by the second liquid layer; and evaporating the second liquid layer such that the second micro device is bound to the substrate.

A semiconductor device includes a semiconductor substrate, a power transistor formed in the semiconductor substrate, the power transistor including an active area in which one or more power transistor cells are formed, a first metal pad formed above the semiconductor substrate and covering substantially all of the active area of the power transistor, the first metal pad being electrically connected to a source or emitter region in the active area of the power transistor, the first metal pad including an interior region laterally surrounded by a peripheral region, the peripheral region being thicker than the interior region, and a first interconnect plate or a semiconductor die attached to the interior region of the first metal pad by a die attach material. Corresponding methods of manufacture are also described.

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

According to an aspect, a power electronic module includes a substrate, a semiconductor die coupled to the substrate, and a clip member configured to secure the semiconductor die to the substrate, where the clip member includes a base portion having a surface coupled to the semiconductor die, an extender portion that extends from the base portion, where the extender portion includes a contact portion coupled to the substrate, and at least one protrusion that extends from the base portion or the extender portion.

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

A clip for use with a power stage device has a first portion defining a first planar surface and a second portion connected to the first portion. The second portion has a second planar surface, a cavity defined in the second planar surface, and at least one notch in a perimeter of the second planar surface. The at least one notch extends into the cavity. A power driver device can include such a clip. A method of forming a clip for use with a power stage device includes providing a frame that has a first planar portion and a second planar portion connected to the first planar portion; stamping a cavity into the second planar portion; and providing at least one notch into a perimeter of the second portion that extends into the cavity.

According to an aspect, a power electronic module includes a substrate, a semiconductor die coupled to the substrate, and a clip member configured to secure the semiconductor die to the substrate, where the clip member includes a base portion having a surface coupled to the semiconductor die, an extender portion that extends from the base portion, where the extender portion includes a contact portion coupled to the substrate, and at least one protrusion that extends from the base portion or the extender portion.