A semiconductor module includes a conductive substrate, a semiconductor element, a control terminal, and a sealing resin. The conductive substrate has an obverse surface and a reverse surface that are spaced apart from each other in a thickness direction. The semiconductor element is electrically bonded to the obverse surface and has a switching function. The control terminal is configured to control the semiconductor element. The sealing resin has a resin obverse surface and a resin reverse surface, and covers the conductive substrate, the semiconductor element, and a part of the control terminal. The control terminal protrudes from the resin obverse surface, and extends along the thickness direction.

A semiconductor apparatus includes a cooler including a bottom plate, a plurality of fins disposed on the bottom plate, and a cover member including a fin cover member and a plate cover member. The fin cover member covers the plurality of fins and has a heat dissipation outer surface. The plate cover member surrounds an outer periphery of the fin cover member, is disposed on the bottom plate, and has a plate cover surface. The apparatus further includes an insulating substrate on the heat dissipation outer surface, a semiconductor element on the insulating substrate, and an insulating member on the plate cover surface, to seal the insulating substrate and the semiconductor element. The plate cover surface is position closer to the bottom plate than is the heat dissipation outer surface with respect to a height direction orthogonal to the bottom plate.

A semiconductor apparatus includes a cooler including a bottom plate, a plurality of fins disposed on the bottom plate, and a cover member including a fin cover member and a plate cover member. The fin cover member covers the plurality of fins and has a heat dissipation outer surface. The plate cover member surrounds an outer periphery of the fin cover member, is disposed on the bottom plate, and has a plate cover surface. The apparatus further includes an insulating substrate on the heat dissipation outer surface, a semiconductor element on the insulating substrate, and an insulating member on the plate cover surface, to seal the insulating substrate and the semiconductor element. The plate cover surface is position closer to the bottom plate than is the heat dissipation outer surface with respect to a height direction orthogonal to the bottom plate.

A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion. The semiconductor module further includes: a first conducting member connected to the first semiconductor elements and second conductive portion; and a second conducting member connected to the second semiconductor elements and second input terminal.

An embodiment related to a device. The device includes a first die with first and second die surfaces. The second die surface is bonded to a first die attach pad (DAP) disposed on a first substrate surface of a package substrate and the first die surface includes a first die contact pad. The device also includes a first clip bond including a first clip bond horizontal planar portion attached to the first die contact pad on the first die surface, and a first clip bond vertical portion disposed on an edge of the first clip bond horizontal planar portion. The first clip bond vertical portion is attached to a first substrate bond pad on the first substrate surface. The device further includes a first conductive clip-die bonding layer with spacers on the first die contact pad of the first die. The first conductive clip-die bonding layer bonds the first clip bond horizontal planar portion to the first die contact pad, and the spacers maintain a uniform Bond Line Thickness (BLT) of the first conductive clip-die bonding layer.

An embodiment of the present invention provides a method for producing a bonded object. The method comprises a step for preparing a laminate in which a first member, a copper bonding paste, and a second member are laminated in order and a step for sintering the copper bonding paste under a pressure of 0.1-1 MPa. The copper bonding paste contains metal particles and a dispersion medium, wherein the content of metal particles is at 50 mass % or more with respect to the total mass of the copper bonding paste, and the metal particles contain 95 mass % or more of submicro copper particles with respect to the total mass of the metal particles.

A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. The multi-clip structure further includes a retaining tape fixed to the first clip and to the second clip to hold the first clip and the second clip together.

A multi-clip structure includes a first clip for die bonding and a second clip for die bonding. The multi-clip structure further includes a retaining tape fixed to the first clip and to the second clip to hold the first clip and the second clip together.

A power electronics module includes a substrate with a substrate metallization layer, which is separated into conducting areas for providing conducting paths for the power electronics module; a semiconductor switch chip bonded with a first power electrode to a first conducting area of the substrate metallization layer; a conductor plate bonded to a second power electrode of the semiconductor switch chip opposite to the first power electrode.

A power electronics module includes a substrate with a substrate metallization layer, which is separated into conducting areas for providing conducting paths for the power electronics module; a semiconductor switch chip bonded with a first power electrode to a first conducting area of the substrate metallization layer; a conductor plate bonded to a second power electrode of the semiconductor switch chip opposite to the first power electrode.