An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.

A disclosed circuit arrangement includes a flexible substrate. A layer of pressure sensitive adhesive (PSA) is directly adhered to a first major surface of the substrate. One or more metal foil pads and electrically conductive wire are attached directly on a surface of the PSA layer. The wire has a round cross-section and one or more portions directly connected to the one or more metal foil pads with one or more weld joints, respectively. An electronic device is attached directly on the surface of the layer of PSA and is electrically connected to the one or more portions of the round wire by one or more bond wires, respectively.

Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Direct die solder (DDS) attach can be achieved by use of electroless nickel plating of the copper contact layer followed by a palladium flash. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Direct die solder (DDS) attach can be achieved by use of electroless nickel plating of the copper contact layer followed by a palladium flash. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Direct die solder (DDS) attach can be achieved by use of electroless nickel plating of the copper contact layer followed by a palladium flash. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Direct die solder (DDS) attach can be achieved by use of electroless nickel plating of the copper contact layer followed by a palladium flash. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

A method of forming a bond pad structure is provided. The method includes forming a first conductive layer over a substrate and depositing a first dielectric layer over the first conductive layer. The first dielectric layer is patterned to form a contiguous planar path substantially parallel to a top surface of the substrate. Patterning the first dielectric layer includes defining a dielectric region of the first dielectric layer surrounded by a portion of the contiguous planar path, and forming a first via hole in the dielectric region. The contiguous planar path and the via hole are filled with a conductive material. The conductive material in the contiguous planar path forms a second conductive layer, and the contiguous planar path extends from a first lateral side wall of the second conductive layer to a second lateral sidewall of the second conductive layer. A bond pad is formed over the second conductive layer, and the bond pad is electrically connected to the second conductive layer.

A disclosed circuit arrangement includes a flexible substrate. A layer of pressure sensitive adhesive (PSA) is directly adhered to a first major surface of the substrate. One or more metal foil pads and electrically conductive wire are attached directly on a surface of the PSA layer. The wire has a round cross-section and one or more portions directly connected to the one or more metal foil pads with one or more weld joints, respectively. An electronic device is attached directly on the surface of the layer of PSA and is electrically connected to the one or more portions of the round wire by one or more bond wires, respectively.

A semiconductor device includes: a first wire bonding area with a first bonding pad, a second wire bonding area with a second bonding pad, and a first bonding wire connecting the first bonding pad to the second bonding pad. The first bonding wire includes a lower pressing section and a first line segment connecting the lower bonding part to the first bonding pad. A distance between the lower pressing section and a plane where the second wire bonding area is located is defined as a first height, which is smaller than 400 m, a length of an orthographic projection of the first bonding wire on the plane is defined as a first length, a length of an orthographic projection of the first line segment on the plane is defined as a second length, and the second length is 20%-80% of the first length.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.