Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.

A power semiconductor contact structure for power semiconductor modules, which has at least one substrate 1 and a metal molded body 2 as an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layer 3a with regions of varying thickness. The metal molded body 2 takes the form here of a flexible contacting film 5 of such a thickness that this contacting film is sintered with its side 4 facing the sintering layer 3a onto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal molded body. The forming of the power semiconductor contact structure is performed firstly by applying a layer of sintering material of locally varying thickness to either the metal molded body 2 or the substrate, followed by sintering together the contacting film 5 with the substrate 1 by using the properties of the layer of sintering material that are conducive to connection, the contacting film 5 being made to develop its distinct form to correspond to the varying thickness of the layer of sintering material 3a.

Various embodiments provide an electronic module comprising a interposer comprising a fluid channel formed in an electrically isolating material and an electrically conductive structured layer; at least one electronic chip attached to the electrically conductive layer and in thermal contact to the fluid channel; and a molded encapsulation formed at least partially around the at least one electronic chip, wherein the electrically conductive structured layer is directly formed on the electrically isolating material.

A method for attaching a prefabricated miniature coaxial wire to a first electrical connection point, the prefabricated miniature coaxial wire having an electrically conductive core disposed within an electrical insulation layer disposed within an electrically conductive shield layer, includes attaching an exposed portion of the electrically conductive core at a distal end of the prefabricated miniature coaxial wire to the first electrical connection point, thereby establishing electrical conductivity between the electrically conductive core and the first electrical connection point, depositing a layer of electrically insulating material onto the exposed portion of the electrically conductive core such that the exposed portion of the electrically conductive core and the first electrical connection point is encased in the layer of electrically insulating material, and connecting the electrically conductive shield layer to a second electrical connection point using a connector formed from an electrically conductive material.

An ultrasonic fingerprint recognition module and a manufacturing method thereof are provided. The ultrasonic fingerprint recognition module includes a substrate, an ultrasonic transmitter, a thin film transistor and an ultrasonic receiver. The method includes the following steps. In a step (a), the substrate, the ultrasonic transmitter, the thin film transistor and the ultrasonic receiver are provided. In a step (b), the ultrasonic transmitter is attached on a top surface of the substrate, and the ultrasonic transmitter is electrically connected with the substrate. In a step (c), the ultrasonic receiver is attached on the thin film transistor. In a step (d), the thin film transistor is attached on the ultrasonic transmitter. In a step (e), the ultrasonic receiver is electrically connected with the thin film transistor and the thin film transistor is electrically connected with the substrate through wires.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.