An electrical interconnection includes a wire loop having a first end bonded to a first bonding site using a first bonding portion, and a second end bonded to a second bonding site using a second bonding portion. The second bonding portion includes a folded portion having a wire that extends from the second end of the wire loop and is folded on the second bonding site. The folded portion includes a first folded portion connected to the second end of the wire loop and extending toward the first bonding site, a second folded portion provided on the first folded portion, and a tail protruding from a portion of the second folded portion. An interface is formed between the first and second folded portions. A top surface of the second folded portion includes an inclined surface recessed toward the first folded portion.

A process of forming an electronic device includes providing a wire comprising a first ball at an end thereof, operating on the first ball to modify a surface of the first ball to form a modified surface, moving the first ball to a first location on a die, and bonding the first ball along the modified surface to the first location of the die. In an embodiment, the process further includes moving a bonding tool including the wire away from the die while the wire remains bonded to the die. In another embodiment,

A method for bonding a hermetic module to an electrode array including the steps of: providing the electrode array having a flexible substrate with a top surface and a bottom surface and including a plurality of pads in the top surface of the substrate; attaching the hermetic module to the bottom surface of the electrode array, the hermetic module having a plurality of bond-pads wherein each bond-pad is adjacent to the bottom surface of the electrode array and aligns with a respective pad; drill holes through each pad to the corresponding bond-pad; filling each hole with biocompatible conductive ink; forming a rivet on the biocompatible conductive ink over each pad; and overmolding the electrode array with a moisture barrier material.

A method for bonding a hermetic module to an electrode array including the steps of: providing the electrode array having a flexible substrate with a top surface and a bottom surface and including a plurality of pads in the top surface of the substrate; attaching the hermetic module to the bottom surface of the electrode array, the hermetic module having a plurality of bond-pads wherein each bond-pad is adjacent to the bottom surface of the electrode array and aligns with a respective pad; drill holes through each pad to the corresponding bond-pad; filling each hole with biocompatible conductive ink; forming a rivet on the biocompatible conductive ink over each pad; and overmolding the electrode array with a moisture barrier material.

To improve an integration degree of a semiconductor device. The semiconductor device includes a plurality of wiring layers formed on the semiconductor substrate, a pad electrode formed on an uppermost wiring layer among the plurality of wiring layers, a base insulating film having a pad opening above the pad electrode, and a rewiring electrically connected to the pad electrode and extending over the base insulating film. Further, the semiconductor device includes a protective film covering an upper surface of the rewiring and having an external pad opening exposing part of the upper surface of the rewiring, an external pad electrode electrically connected to the rewiring through the external pad opening and extending over the protective film, and a wire connected to the external pad electrode. Part of the external pad electrode is located in a region outside the rewiring.

A semiconductor device capable of securing an insulation distance between a semiconductor element and a wiring. The semiconductor device includes a first semiconductor element, a second semiconductor element, a first wiring, and a second wiring. The first semiconductor element includes a first main surface and a second main surface. An electrode is formed on the first main surface. The second semiconductor element is disposed at a position different from a position of the first semiconductor element in a thickness direction. The first wiring includes an end connected to the electrode. The end includes an upper surface and a cut surface. Diameter of the second wiring is smaller than diameter of the first wiring. The second wiring includes a first end and a second end. The first end is directly connected to the upper surface of the end of the first wiring.