A power semiconductor contact structure for power semiconductor modules, which has at least one substrate 1 and a metal molded body 2 as an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layer 3a with regions of varying thickness. The metal molded body 2 takes the form here of a flexible contacting film 5 of such a thickness that this contacting film is sintered with its side 4 facing the sintering layer 3a onto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal molded body. The forming of the power semiconductor contact structure is performed firstly by applying a layer of sintering material of locally varying thickness to either the metal molded body 2 or the substrate, followed by sintering together the contacting film 5 with the substrate 1 by using the properties of the layer of sintering material that are conducive to connection, the contacting film 5 being made to develop its distinct form to correspond to the varying thickness of the layer of sintering material 3a.

The invention relates to the electrically conductive bond between at least two electrical components and/or devices at a carrier mounted with electronic and/or electrical devices, said bond being formed by a bond wire. The bond wire is bonded in a force fitting, shape matching manner and/or with material continuity to the electrical components and/or devices and is shaped in an arcuate manner between the electrical components and/or devices at a spacing from the surface of the carrier and from electronic and/or electrical devices arranged there. The respective bond wire is bent a multiple of times with changing directions between the electrical components and/or devices such that tips or regions of individual arcs are arranged at different spacings from the surface of the carrier. At least one element formed from or by an electrically conductive material can, however, also be arranged between the surface of the carrier and the arcuate bond wire and the electrically conductive material is arranged at a spacing from the respective bond wire.

A semiconductor device includes an electrically conductive contact pad structure. Moreover, the semiconductor device includes a bond structure. The bond structure is in contact with the electrically conductive contact pad structure at least at an enclosed interface region. Additionally, the semiconductor device includes a degradation prevention structure laterally surrounding the enclosed interface region. The degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.

A semiconductor device has an electrical component with bump structures. A conductive layer is formed over the electrical component with a first segment of the conductive layer coupled between the first and second bumps. The electrical component is disposed on a paddle of a lead frame interposer. A first bond wire is coupled between a first lead and the first bump. A second bond wire is coupled between a second lead and the second bump. A third bond wire is coupled between a third lead and a third bump, and a fourth bond wire is coupled between a fourth lead and a fourth bump. A fifth bond wire coupled between the second lead and third lead and a second segment of the conductive layer is coupled between the third bump and fourth bump to constitute a daisy chain loop to test continuity of the bump structures.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.