A semiconductor device may include: a substrate; a metallization layer disposed at least one of in or over the substrate; a protection layer disposed at least partially over the metallization layer, wherein the metallization layer includes at least one of: copper, aluminum, gold, silver; and wherein the protection layer includes a nitride material including at least one of: copper, aluminum, gold, silver.

Integrated circuits having copper bonding structures with silicon carbon nitride passivation layers and methods for making the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate and a copper bonding structure having a contact surface. The copper bonding structure overlies the substrate. A passivation layer formed of silicon carbon nitride is disposed on the contact surface.

The present disclosure relates to a semiconductor device, a manufacturing method thereof, and an electrical system. An example semiconductor comprises: a semiconductor substrate comprising at least one power semiconductor device; an insulating film on the semiconductor substrate having at least one first opening that penetrates through the insulating film, the at least one first opening exposing a corresponding first portion of the semiconductor substrate; at least one conductive attachment component filled in a corresponding first opening of the at least one first opening; and a metal sheet provided on the insulating film and the at least one attachment component, wherein a corresponding portion of the metal sheet is bonded and electrically connected to the corresponding first portion of the semiconductor substrate by the at least one attachment component.