An integrated circuit device having improved delamination properties is provided. The integrated circuit may include a leadframe having a die support area supporting an integrated circuit die, and a plurality of leadframe leads. Surfaces of the leadframe leads are roughened by a roughening process to form roughened surfaces having an average roughness R.sub.a. A thin plating layer is formed over the roughened leadframe lead surfaces, with a plating layer thickness of less than 40 times the roughness R.sub.a of the leadframe lead surfaces, such that the thin plating layer is received into the roughened leadframe lead surface contours and thereby itself has a contoured outer surface. A molding material applied to the structure may directly contact and adhere to the contoured surface of the thin plating layer. The adhesion between the molding material and the contoured plating layer may reduce or eliminate delamination of the molding material from the leadframe.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A flexible multilayer construction (100) for mounting a light emitting semiconductor device (200) (LESD), includes a flexible dielectric substrate (110) having an LESD mounting region (120), first and second electrically conductive pads (130, 140) disposed in the LESD mounting region for electrically connecting to corresponding first and second electrically conductive terminals of an LESD (200) received in the LESD mounting region, and a first fiducial alignment mark (150) for an accurate placement of an LESD in the LESD mounting region. The first fiducial alignment mark is disposed within the LESD mounting region.

A method for bonding a hermetic module to an electrode array including the steps of: providing the electrode array having a flexible substrate with a top surface and a bottom surface and including a plurality of pads in the top surface of the substrate; attaching the hermetic module to the bottom surface of the electrode array, the hermetic module having a plurality of bond-pads wherein each bond-pad is adjacent to the bottom surface of the electrode array and aligns with a respective pad; drill holes through each pad to the corresponding bond-pad; filling each hole with biocompatible conductive ink; forming a rivet on the biocompatible conductive ink over each pad; and overmolding the electrode array with a moisture barrier material.

A semiconductor device includes a leadframe, a semiconductor chip, and an encapsulation resin encapsulating the leadframe and the semiconductor chip. The leadframe includes a first surface and a second surface facing away from the first surface. The semiconductor chip is mounted on the first surface of the leadframe. A part of the second surface of the leadframe is depressed toward the first surface to form a step surface. The step surface includes an uneven surface part where depressions are formed, and is covered with the encapsulation resin.

A solid-state device includes a metal pattern formed on a substrate, a conductive bump connected to the metal pattern so as to be contact with a side surface of the metal pattern, and a solid-state element connected to the metal pattern via the conductive bump. A bottom surface level of at least a portion of the conductive bump is substantially equal to a bottom surface level of a portion of the metal pattern at which the metal pattern is connected to the conductive bump.

To improve a performance of a semiconductor device, a semiconductor device includes a lead electrically coupled to a semiconductor chip via a wire. An inner portion of the lead, the semiconductor chip, and the wire are sealed by a sealing body (a resin sealing body). The wire is bonded to an upper surface of a wire bonding portion of the inner portion of the lead. A metal film is formed on a lower surface of the inner portion of the lead, which is on an opposite side to the upper surface. No metal film is formed on the upper surface of the wire bonding portion.

Semiconductor devices comprising at least one electrically conductive metal element in a non-conductive package material are manufactured by: providing a first metal layer having a smooth morphology for covering the aforesaid metal element; and providing a second metal layer for covering partially the first layer, leaving at least one portion of the surface of the first layer exposed, the second layer having a rough morphology. There may moreover be provided a die pad for mounting a semiconductor die by providing the aforesaid first layer for covering the die pad and attaching a semiconductor die on the die pad in contact with said first layer.

A semiconductor device includes a lead frame; a semiconductor chip mounted on the lead frame; and an encapsulation resin, wherein a convexo-concave portion including a plurality of concave portions is provided at a covered portion of the lead frame that is covered by the encapsulation resin, wherein the planer shape of each of the concave portions is a circle, the diameter of which is greater than or equal to 0.020 mm and less than or equal to 0.060 mm, or a polygon, the diameter of whose circumcircle is greater than or equal to 0.020 mm and less than or equal to 0.060 mm, and wherein a ratio S/S.sub.0 is greater than or equal to 1.7 where S is a surface area of the convexo-concave portion that is formed at a flat surface whose surface area is S.sub.0.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.