A semiconductor package including: a base layer; and a first chip stack and a second chip stack sequentially stacked over the base layer, each of the first and second chip stacks including first to fourth semiconductor chips which are offset stacked to expose chip pads at one side edge thereof, and the chip pads including stack identification pads for identifying the first chip stack and the second chip stack, and first and second chip identification pads for identifying the first to fourth semiconductor chips in each of the first and second chip stacks.

A method of manufacturing a semiconductor device is provided. The method includes forming a package leadframe including leads and a die paddle. A cavity is formed in the die paddle. Sidewall and bottom surfaces of the cavity are plated with a solder alloy material. A semiconductor die is attached to the bottom surface of the cavity by way of a thermal cycle. A molding compound encapsulates the semiconductor die, a portion of the leads, and a portion of the die paddle.

A semiconductor package including: a base layer; a first chip stack and a second chip stack sequentially stacked over the base layer, each of the first and second chip stacks including a plurality of semiconductor chips which are offset stacked to expose chip pads at one side edge thereof, and the chip pads including stack identification pads for identifying the first chip stack and the second chip stack and chip identification pads for identifying the plurality of semiconductor chips in each of the first and second chip stacks; a first inter-chip wire and a second inter-chip wire connecting power-applied ones of the chip identification pads of the plurality of semiconductor chips of the first and second chip stacks; a first stack wire and second stack wire connecting the chip identification pad of a lowermost semiconductor chip of the first and second chip stacks to the base layer.

An example includes: a substrate having a first package surface, having a second package surface opposite the first package surface, and having a die cavity with a depth extending into the first package surface; a semiconductor die having bond pads on a first die surface and having a second die surface opposite the first die surface, the semiconductor die having a die thickness, the second die surface of the semiconductor die mounted in the die cavity; a cover over a portion of the first die surface; conductors coupling the bond pads of the semiconductor die to bond fingers on the first package surface of the substrate; and dielectric material over the conductors, the bond fingers, the bond pads, at least a portion of the first semiconductor die and at least a portion of the cover, wherein the dielectric material extends above the first package surface of the substrate.

According to an aspect of the present disclosure, a semiconductor device includes a base plate, a first semiconductor chip provided above the base plate, a bonding wire joined with the first semiconductor chip at a first joint part and having a curved part above the first joint part, a first sealing member provided from an upper surface of the base plate up to a height higher than the first joint part and lower than the curved part, the first sealing member covering the first joint part and a second sealing member provided on the first sealing member, covering the curved part, and having an elastic modulus lower than an elastic modulus of the first sealing member.

A light emitting apparatus, including: a first light emitting device with a first substrate having a first upper surface and first bottom surface, a plurality of first LED chips disposed on the first upper surface, emitting a light penetrating the first substrate, and a first wavelength conversion layer directly contacting the plurality of first LED chips and first upper surface, and a first shape in a cross-sectional view; a second wavelength conversion layer directly contacting the first bottom surface; a second shape in the cross-sectional view substantially the same as the first shape; a second light emitting device separated from the first light emitting device, including a second substrate and plurality of second LEDs disposed on the second substrate; a support base connected to the first light emitting device by a first angle and connected to the second light emitting device by a second angle; and a first support arranged between the support base and first light emitting device.

A semiconductor package includes a carrier substrate having a top surface; a semiconductor die mounted on the top surface; a plurality of first bonding wires connecting the semiconductor die to the carrier substrate; an insulating material encapsulating the plurality of first bonding wires; a component having a metal layer mounted on the insulating material; a plurality of second bonding wires connecting the metal layer of the component to the carrier substrate; and a molding compound covering the top surface of the carrier substrate and encapsulating the semiconductor die, the component, the plurality of first bonding wires, the plurality of second bonding wires, and the insulating material. The metal layer and the plurality of second bonding wires constitute an electromagnetic interference (EMI) shielding structure.

A molded semiconductor package includes: a semiconductor die attached to a substrate, the semiconductor die having a bond pad at a first side of the semiconductor die which faces away from the substrate and an insulating layer covering the first side; an electrical conductor attached to a part of the bond pad exposed by an opening in the insulating layer; a mold compound encasing the semiconductor die; and an electrically insulative material filling the opening in the insulating layer and sealing the part of the bond pad exposed by the opening in the insulating layer. The electrically insulative material separates the mold compound from the part of the bond pad exposed by the opening in the insulating layer. A breakdown voltage of the electrically insulative material is greater than a breakdown voltage of the mold compound.

A pressure pulse wave sensor includes: a sensor chip including: a pressure-sensitive element row configured by a plurality of pressure-sensitive elements arranged in one direction; and a chip-side terminal portion placed in an end portion in the one direction of a pressure-sensitive surface on which the pressure-sensitive element row is formed, and electrically connected to the pressure-sensitive element row; and a substrate including a concave portion, the sensor chip fixed to a bottom surface of the concave portion, a substrate-side terminal portion for being electrically connected to the chip-side terminal portion is disposed on a surface of the substrate in which the concave portion is formed, and the pressure pulse wave sensor further includes: an electroconductive member connecting the chip-side terminal portion and the substrate-side terminal portion to each other; and a protective member covering the electroconductive member.

In a semiconductor apparatus, the apparatus is so arranged as to comprise: a semiconductor device having electrodes and wiring-interconnects on a main surface of a semiconductor chip; a first resin structure member, being placed on a side of the main surface of the semiconductor chip, constituting, in lateral and upward directions of a specific electrode of the semiconductor device, a hollow-body structure between the specific electrode and the first resin structure member; a second resin structure member covering an outer lateral side of the first resin structure member, and having the permittivity smaller than or equal to the permittivity of the first resin structure member; and an insulation film covering an outer lateral side of the second resin structure member, and having moisture permeability lower than that of the second resin structure member.