A surface mounting device has one body of semiconductor material such as an ASIC, and a package surrounding the body. The package has a base region carrying the body, a cap and contact terminals. The base region has a Young's modulus lower than 5 MPa. For forming the device, the body is attached to a supporting frame including contact terminals and a die pad, separated by cavities; bonding wires are soldered to the body and to the contact terminals; an elastic material is molded so as to surround at least in part lateral sides of the body, fill the cavities of the supporting frame and cover the ends of the bonding wires on the contact terminals; and a cap is fixed to the base region. The die pad is then etched away.

A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise an interconnection structure, for example a bond wire, at least a portion of which extends into a dielectric layer utilized to mount a plate, and/or that comprise an interconnection structure that extends upward from the semiconductor die at a location that is laterally offset from the plate.

A curable resin composition having high transparency in the UV region, UV resistance and heat resistance. The curable resin composition includes an alkoxy oligomer represented by Formula 1 of (R.sup.1R.sup.2R.sup.3SiO.sub.1/2).sub.w(R.sup.4R.sup.5SiO.sub.2/2).sub.x(R.sup.6SiO.sub.3/2).sub.y(SiO.sub.4/2).sub.z and a curing catalyst. The curing catalyst is phosphoric acid present in an amount of 3-30 parts by weight based on 100 parts by weight of the alkoxy oligomer, or alkoxide of at least one metal selected from the group consisting of B, Al, P, Sc, Ga, Y, Zr, Nb, In, Sn, La, Gd, Dy, Yb, Hf, Ta and W, present in an amount of 0.5-20 parts by weight based on 100 parts by weight of the alkoxy oligomer. Each of R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 independently represents the same or a different organic group, w, x, y and z are 0 or positive numbers satisfying the relationship of w+x+y+z=1, and the atomic ratio of O/Si is 2.3-3.5.

A novel heat sinking technology, uniquely adaptive to LED lighting devices in a generally LED array format containing multiple openings on said heat sink's base portions and optionally fin portions providing “short path cooling” technology. The “short path cooling” technology is thoroughly taught with multiple examples. Also taught, are methods of heat sink area maintenance when said openings are placed on said heat sinks. Indeed, even surface area increases are shown to be possible when multiple openings are placed on said heat sinks. Lastly, other non-LED semiconductor cooling is discussed and illustrated in various figures using said “short path cooling” technology.

A wave-length conversion inorganic member can includes a base body and an inorganic particle layer on the base body. The inorganic particle layer can include particles of an inorganic wave-length conversion substance which is configured to absorb light of a first wave-length and to emit light of a second wave-length different from the first wave-length. The inorganic particle layer can include an agglomerate of a plurality of the particles. Each of the plurality of the particles are in contact with at least one of the other particles or the base body. A cover layer comprises an inorganic material, and the cover layer continuously covers a surface of the base body and surfaces of the particles. The inorganic particle layer has an interstice enclosed by the particles, or by the particles and one of the base body and the cover layer.

A light emitting device includes: a substrate; a light emitting element disposed on the substrate, the light emitting element having an upper surface and a lateral surface; a reflecting layer located on the upper surface of the light emitting element; a first light-transmissive member having a first surface in contact with the lateral surface of the light emitting element, and a second surface that is inclined toward the substrate in a direction outward from the light emitting element; and a second light-transmissive member in contact with the second surface and covering the light emitting element. A refractive index of the first light-transmissive is smaller than a refractive index of the second light-transmissive member.

A method for fabricating a semiconductor device includes the steps of first forming an aluminum (Al) pad on a substrate, forming a passivation layer on the substrate and an opening exposing the Al pad, forming a cobalt (Co) layer in the opening and on the Al pad, bonding a wire onto the Co layer, and then performing a thermal treatment process to form a Co—Pd alloy on the Al pad.

A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.

A phosphor having different light emission characteristics from the conventional phosphor, having high emission intensity and chemical and thermal stability, combined with LED of less than 450 nm. This phosphor includes an inorganic compound comprising: a crystal represented by Ba.sub.1Si.sub.4Al.sub.3N.sub.9, an inorganic crystal having the same crystal structure as Ba.sub.1Si.sub.4Al.sub.3N.sub.9 crystal, or a solid solution crystal thereof, comprising A element, D element, E element, and X element (A is one or more elements selected from Li, Mg, Ca, Sr, Ba, and La; D is one or more elements selected from Si, Ge, Sn, Ti, Zr, and Hf; E is one or more elements selected from B, Al, Ga, In, Sc, and Y; X is one or more elements selected from O, N, and F), into which M element is solid-solved (M is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb).

A semiconductor device includes a semiconductor package including an n-type channel normally-off transistor, a normally-on transistor, a first diode, and a Zener diode; a first terminal provided on the semiconductor package; a plurality of second terminals provided on the semiconductor package, and the second terminals being lined up in a first direction; a third terminal provided on the semiconductor package; a plurality of fourth terminals provided on the semiconductor package; and a plurality of fifth terminals provided on the semiconductor package, and the fifth terminals being lined up in the first direction.